論文 Electronic modes induced by spin and charge perturbations in Mott and Kondo insulators

Masanori Kohno SAMURAI ORCID (Research Center for Materials Nanoarchitectonics (MANA)/Quantum Materials Field/Quantum Material Properties Group, National Institute for Materials Science)

コレクション

引用
Masanori Kohno. Electronic modes induced by spin and charge perturbations in Mott and Kondo insulators. PHYSICAL REVIEW B. 2025, 112 (24), . https://doi.org/10.1103/ythd-s2x8

代替タイトル: モット絶縁体と近藤絶縁体におけるスピンと電荷の摂動によって誘起される電子モード

説明:

(abstract)

Electronic band structures usually remain unaffected by doping via a chemical-potential shift or by increasing the temperature in conventional band insulators. In contrast, it has been shown that those of Mott and Kondo insulators can be altered by doping or by increasing the temperature: electronic modes are induced within the band gap, exhibiting momentum-shifted magnetic dispersion relations from the band edges. Here, this study demonstrates that the underlying mechanism of the remarkable strong-correlation effects can be generalized to the emergence of electronic modes caused by various spin and charge perturbations, including magnetization of spin-gapped Mott and Kondo insulators. These emergent modes can alter the band structure if a macroscopic number of spins or charges are excited by the perturbations at a given moment. The origins and dispersion relations of these emergent modes, particularly why and how the dispersion relations depend on the momentum and energy of the perturbations, are elucidated by investigating the selection rules and using the Bethe ansatz and the effective theory for weak inter-unit-cell hopping. The validity and generality of the theoretical results across different models and spatial dimensions are verified by numerical calculations for the one- and two-dimensional Hubbard models, periodic Anderson models, Kondo lattice models, and ladder and bilayer Hubbard models. This study provides crucial insights into why and how spin and charge perturbations can alter the band structure in strongly correlated insulators, thereby paving the way for band-structure engineering in strong-correlation electronics, which enables previously unexplored functionalities by exploiting the unconventional characteristics revealed in this paper.

権利情報:

キーワード: Strongly correlated systems, Mott insulators, Electronic structure, Spin perturbation, Charge perturbation, Kondo insulators

刊行年月日: 2025-12-03

出版者: American Physical Society (APS)

掲載誌:

  • PHYSICAL REVIEW B (ISSN: 24699950) vol. 112 issue. 24

研究助成金:

  • 日本学術振興会 22K03477, 25K07160

原稿種別: 出版者版 (Version of record)

MDR DOI: https://doi.org/10.48505/nims.5816

公開URL: https://doi.org/10.1103/ythd-s2x8

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更新時刻: 2025-12-11 12:21:37 +0900

MDRでの公開時刻: 2025-12-09 16:26:08 +0900

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