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The bias-stress effects of bottom-gate top-contact polymer-based OFETs with different channel lengths were evaluated by repeating cycles of prolonged on-state gate-bias application and transfer characteristics measurements in linear regime. The thicknesses of PQTBTz-C12 active layers were 26 and 37 nm. All OFETs exhibited nonlinear transfer characteristics with a maximum transconductance. Both a shift in threshold voltage and a reduction in field-effect charge carrier mobility were apparently observed during the bias-stress application. When mobility and threshold voltage were conventionally extracted from the transfer characteristics around the maximum transconductance, the threshold voltage shift amount and mobility reduction depended on the channel length and were smaller in OFETs with short channels. After contact resistance correction, the channel length dependence disappeared. Therefore, the operational stability in OFETs with short channels: ≦ 50 (150) μm for the 26 (37) nm-thick active layers, was found to be overestimated without contact resistance correction. This erroneous evaluation would become more pronounced in short-channel, high-mobility OFETs.

Rights:

• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  

Keyword: polymer-based organic field-effect transistors, bias-stress effects, contact resistance, modified transmission line method, operational stability

Date published: 2024-12-11

Publisher: American Chemical Society (ACS)

Journal:

• ACS Applied Materials & Interfaces (ISSN: 19448252) vol. 16 issue. 49 p. 68081-68090

Funding:

• Ministry of Education, Culture, Sports, Science and Technology JPMXP1223NM5185 (ナノレベルで構造制御された有機薄膜の作製とそれを用いたデバイスの作製・評価)
• Japan Society for the Promotion of Science 20K05310 (高分子有機トランジスタの高移動度・高安定動作実現における液晶性の重要性)

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1021/acsami.4c15666

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Updated at: 2025-12-04 16:39:15 +0900

Published on MDR: 2025-12-04 16:23:47 +0900