Danis I. Badrtdinov
;
Carlos Rodriguez‐Fernandez
;
Magdalena Grzeszczyk
;
Zhizhan Qiu
;
Kristina Vaklinova
;
Pengru Huang
;
Alexander Hampel
;
Kenji Watanabe
(National Institute for Materials Science
)
;
Takashi Taniguchi
(National Institute for Materials Science
)
;
Lu Jiong
;
Marek Potemski
;
Cyrus E. Dreyer
;
Maciej Koperski
;
Malte Rösner
説明:
(abstract)A key advantage of utilizing van der Waals materials as defect-hosting platforms for quantum applications is the controllable proximity of the defect to the surface or the substrate for improved light extraction, enhanced coupling with photonic elements, or more sensitive metrology. However, this aspect results in a significant challenge for defect identification and characterization, as the defect’s optoelectronic properties depend on the specifics of the atomic environment. Here we explore the mechanisms by which the environment can influence the properties of carbon impurity centres in hexagonal boron nitride (hBN). We compare the optical and electronic properties of such defects between bulk-like and few-layer films, showing alteration of the zero-phonon line energies, modifications to their phonon sidebands, and enhancements of their inhomogeneous broadenings. To disentangle the various mechanisms responsible for these changes, including the atomic structure, electronic wavefunctions, and dielectric screening environment of the defect center, we combine ab-initio calculations based on a density-functional theory with a quantum embedding approach. By studying a variety of carbon-based defects embedded in monolayer and bulk hBN, we demonstrate that the dominant effect of the change in the environment is the screening of the density-density Coulomb interactions within and between the defect orbitals. Our comparative analysis of the experimental and theoretical findings paves the way for improved identification of defects in low- dimensional materials and the development of atomic scale sensors of dielectric environments.
権利情報:
キーワード: Van-der-Waals materials, defect-hosting platforms, carbon impurity centers
刊行年月日: 2023-06-17
出版者: Wiley
掲載誌:
研究助成金:
原稿種別: 出版者版 (Version of record)
MDR DOI:
公開URL: https://doi.org/10.1002/smll.202300144
関連資料:
その他の識別子:
連絡先:
更新時刻: 2025-02-28 16:30:53 +0900
MDRでの公開時刻: 2025-02-28 16:30:53 +0900
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Small - 2023 - Badrtdinov - Dielectric Environment Sensitivity of Carbon Centers in Hexagonal Boron Nitride.pdf
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サイズ | 2.62MB | 詳細 |