Journal article
Photoelectron Holographic Study of Atomic Structure of Si Dopants for Si-doped κ-Ga2O3(001)
Yoshiyuki YAMASHITA
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Yuhua TSAI
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Yusuke HASHIMOTO
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Tomohiro MATSUSHITA
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Piero MAZZOLINI
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Citation
Yoshiyuki YAMASHITA, Yuhua TSAI, Yusuke HASHIMOTO, Tomohiro MATSUSHITA, Piero MAZZOLINI.
Photoelectron Holographic Study of Atomic Structure of Si Dopants for Si-doped κ-Ga2O3(001).
Vacuum and Surface Science.
2026,
69
(7),
.
https://doi.org/10.1380/vss.69.346
Description:
(abstract)既に出版している濃度とは異なるSiをドープしたk-Ga2O3を用い、濃度が異なることによるドーパントの原子構造、キャリア密度、ドーパントの活性サイト・不活性サイトの割合変化を議論した。
Rights:
Keyword: Photoelectron Holography, Ga2O3, dopant
Date published: 2026-07-10
Publisher: Surface Science Society Japan
Journal:
- Vacuum and Surface Science (ISSN: 24335835) vol. 69 issue. 7
Funding:
Manuscript type: Author's version (Accepted manuscript)
MDR DOI: https://doi.org/10.48505/nims.6445
First published URL: https://doi.org/10.1380/vss.69.346
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Updated at: 2026-08-05 15:56:53 +0900
Published on MDR: 2026-08-05 18:28:00 +0900
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