Journal article Switching the persistent spin helix’s orientation in gate-controlled GaAs double quantum wells
S. Chander (author) (Search by this author)
ORCID https://orcid.org/0009-0002-8739-4809 (unauthenticated)
ORCID ;
B.W. Grobecker (author) (Search by this author)
ORCID https://orcid.org/0009-0007-0344-0764 (unauthenticated)
ORCID ;
A.V. Poshakinskiy (author) (Search by this author)
;
S. Anghel (author) (Search by this author)
ORCID https://orcid.org/0000-0003-4517-4314 (unauthenticated)
ORCID ; ORCID SAMURAI ;
J.N. Moore (author) (Search by this author)
ORCID https://orcid.org/0000-0003-0482-8553 (unauthenticated)
ORCID ;
G. Yusa (author) (Search by this author)
ORCID https://orcid.org/0000-0003-3053-7629 (unauthenticated)
ORCID ;
M. Betz (author) (Search by this author)
ORCID https://orcid.org/0000-0002-5676-3432 (unauthenticated)
ORCID
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Citation
S. Chander, B.W. Grobecker, A.V. Poshakinskiy, S. Anghel, T. Mano, J.N. Moore, G. Yusa, M. Betz. Switching the persistent spin helix’s orientation in gate-controlled GaAs double quantum wells. Physical Review Applied. 2026, 25 (3), 034064. https://doi.org/10.1103/m4cv-6cyt

Description:

(abstract)

Employing time-resolved Kerr rotation microscopy, we demonstrate electrical control over the orientation of the persistent spin helix in a double GaAs quantum well structure equipped with independent front and back gates. We map spin polarization patterns under varying gate voltages and show that coordinated tuning of two gates enables switching between two orthogonal persistent spin helix (PSH) orientations.

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Keyword: GaAs, Quantum well, Persistent spin helix

Date published: 2026-03-19

Publisher: American Physical Society (APS)

Journal:

  • Physical Review Applied (ISSN: 23317019) vol. 25 issue. 3 034064

Funding:

  • Grant-in-Aid for Scientific Research 19H05603
  • Grant-in-Aid for Scientific Research 21H05182
  • Grant-in-Aid for Scientific Research 21H05188
  • Grant-in-Aid for Scientific Research 24H00399
  • Ministry of Education Culture Sports Science and Technology

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.6242

First published URL: https://doi.org/10.1103/m4cv-6cyt

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Updated at: 2026-04-03 09:04:16 +0900

Published on MDR: 2026-04-03 12:26:45 +0900

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