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We demonstrate a significant effect of atomic-scale MgO insertion layers on the tunnel magnetoresistance (TMR) in epitaxial magnetic tunnel junctions (MTJs) using a small bandgap oxide MgGa2O4. An enhanced TMR ratio of 151% at room temperature (resistance area product, RA: 23 kΩ ⋅ μm2) and 291% at 5 K (RA: 26 kΩ ⋅ μm2) were observed using 0.3 nm MgO insertion layers at the bottom and top barrier interfaces in Fe/MgGa2O4/Fe(001) MTJs with a total barrier thickness of 2.3 nm. The TMR showed a strong MgO thickness dependence. Microstructure analyses revealed that after MgO insertion, a homogeneous rock-salt structured Mg0.55Ga0.45O(001) barrier is formed, which differs from the nominal spinel crystal MgGa2O4. Elemental mapping of the MTJ showed that Ga diffusion into the adjacent Fe can be effectively suppressed while maintaining perfect lattice-matching at the Fe/barrier interfaces, thereby improving effective tunneling spin polarization through the barrier. The RA of the Mg0.55Ga0.45O (2.3 nm) MTJ is smaller than that of a comparable MgAl2O4 barrier (2.3 nm), thanks to the lower barrier height of the Mg0.55Ga0.45O as confirmed by the current–voltage characteristics.

Rights:

• Creative Commons BY Attribution 4.0 International
  

Keyword: Spintronics, magnetic tunnel junction, MgGa2O4

Date published: 2025-01-13

Publisher: AIP Publishing

Journal:

• Applied Physics Letters (ISSN: 00036951) vol. 126 issue. 2

Funding:

• KIOXIA Corporation
• Ministry of Education, Culture, Sports, Science and Technology JPMXP1122715503
• Japan Society for the Promotion of Science 21H01750
• Japan Society for the Promotion of Science 22H04966
• Japan Society for the Promotion of Science 24H00408

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1063/5.0247660

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Updated at: 2025-02-12 12:30:13 +0900

Published on MDR: 2025-02-12 12:30:14 +0900