Journal article Charge transport and thermopower in the electron-doped narrow gap semiconductor Ca1−xLaxPd3O4
Kouta Kazama (author) (Search by this author)
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Masato Sakano (author) (Search by this author)
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Kohei Yamagami (author) (Search by this author)
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Takuo Ohkochi (author) (Search by this author)
;
Kyoko Ishizaka (author) (Search by this author)
;
Terumasa Tadano (author) (Search by this author)
ORCID https://orcid.org/0000-0002-8132-2161
National Institute for Materials Science
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Yusuke Kozuka (author) (Search by this author)
ORCID https://orcid.org/0000-0001-7674-600X
National Institute for Materials Science
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Hidetoshi Yoshizawa (author) (Search by this author)
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Yoshihiro Tsujimoto (author) (Search by this author)
ORCID https://orcid.org/0000-0003-2140-3362
National Institute for Materials Science
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Kazunari Yamaura (author) (Search by this author)
ORCID https://orcid.org/0000-0003-0390-8244
National Institute for Materials Science
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Jun Fujioka (author) (Search by this author)
PhysRevMaterials.7.085402.pdf
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Citation
Kouta Kazama, Masato Sakano, Kohei Yamagami, Takuo Ohkochi, Kyoko Ishizaka, Terumasa Tadano, Yusuke Kozuka, Hidetoshi Yoshizawa, Yoshihiro Tsujimoto, Kazunari Yamaura, Jun Fujioka. Charge transport and thermopower in the electron-doped narrow gap semiconductor Ca1−xLaxPd3O4. Physical Review Materials. 2023, 7 (8), 85402. https://doi.org/10.1103/PhysRevMaterials.7.085402

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(abstract)

狭ギャップ半導体であるCa1-xLaxPd3O4の輸送特性、熱電特性、電子状態計測を行った。x=0では0.1eV程度のバンドギャップを持ち、第一原理計算と一致した。また、Laによる電子ドープにより急激に抵抗は減少しx=0.01では金属的になった。一方で、ゼーベック係数はxに対して緩やかに減少した。パワーファクターは7μW/K2に達し、ホールドープCaPd3O4に比べて格段に大きな値であった。第一原理計算と光電子分光によって、高移動度に起因することを明らかにした。

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Keyword: Palladates

Date published: 2023-08-11

Publisher: American Physical Society (APS)

Journal:

  • Physical Review Materials (ISSN: 24759953) vol. 7 issue. 8 85402

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Manuscript type: Publisher's version (Version of record)

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First published URL: https://doi.org/10.1103/PhysRevMaterials.7.085402

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Updated at: 2024-01-05 22:13:52 +0900

Published on MDR: 2023-12-02 13:30:27 +0900

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