Journal article Optical Coherence of B Center Quantum Emitters in Hexagonal Boron Nitride
Jake Horder (author) (Search by this author)
;
Dominic Scognamiglio (author) (Search by this author)
;
Nathan Coste (author) (Search by this author)
;
Angus Gale (author) (Search by this author)
;
Kenji Watanabe (author) (Search by this author)
ORCID SAMURAI ;
Takashi Taniguchi (author) (Search by this author)
ORCID SAMURAI ;
Mehran Kianinia (author) (Search by this author)
;
Milos Toth (author) (Search by this author)
;
Igor Aharonovich (author) (Search by this author)
Collection

Citation
Jake Horder, Dominic Scognamiglio, Nathan Coste, Angus Gale, Kenji Watanabe, Takashi Taniguchi, Mehran Kianinia, Milos Toth, Igor Aharonovich. Optical Coherence of B Center Quantum Emitters in Hexagonal Boron Nitride. ACS Photonics. 2025, 12 (3), 1284-1290. https://doi.org/10.1021/acsphotonics.4c02088

Description:

(abstract)

Coherent quantum emitters are a central resource for advanced quantum technologies. Hexagonal boron nitride (hBN) hosts a range of quantum emitters that can be engineered using techniques such as high-temperature annealing, optical doping, and irradiation with electrons or ions. Here, we demonstrate that such processes can degrade the coherence and, hence, the functionality of quantum emitters in hBN. Specifically, we show that hBN annealing and doping methods that are used routinely in hBN nanofabrication protocols give rise to fluctuations in the spectrum and intensity of B center quantum emitters. This decoherence is characterized in detail and attributed to defects that act as charge traps, which fluctuate electrostatically during SPE excitation and induce spectral diffusion. The decoherence is minimal when the emitters are engineered by electron beam irradiation of as-grown, pristine flakes of hBN, where B center line widths approach the lifetime limit needed for quantum applications involving interference and entanglement. Our work highlights the critical importance of crystal lattice quality to achieving coherent quantum emitters in hBN, despite the common perception that the hBN lattice and hBN SPEs are highly stable and resilient against chemical and thermal degradation. It underscores the need for nanofabrication techniques that are minimally invasive and avoid crystal damage when engineering hBN SPEs and devices for quantum-coherent technologies.

Rights:

  • In Copyright

    This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Photonics, copyright © 2025 American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsphotonics.4c02088

Keyword: Hexagonal boron nitride, Quantum emitter, Decoherence

Date published: 2025-03-19

Publisher: American Chemical Society (ACS)

Journal:

  • ACS Photonics (ISSN: 23304022) vol. 12 issue. 3 p. 1284-1290

Funding:

  • Australian Research Council CE200100010
  • Australian Research Council DP240103127
  • Australian Research Council FT220100053
  • Japan Society for the Promotion of Science 21H05233
  • Japan Society for the Promotion of Science 23H02052

Manuscript type: Author's version (Accepted manuscript)

MDR DOI:

First published URL: https://doi.org/10.1021/acsphotonics.4c02088

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Updated at: 2026-07-28 12:26:14 +0900

Published on MDR: 2026-07-28 16:27:18 +0900

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