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Diamond-based solar blind deep ultraviolet (DUV) photodetectors (PDs) have attracted extensive attention due to their unique characteristics in extremely harsh environment. Until now, its low responsivity has not been sufficient to meet the needs of the application. Here, an ultrahigh performance diamond-based solar blind DUV PD was obtained by controlling the two-dimensional hole carrier concentration on the epilayer-free Ib-type diamond surface through adjusting the duration of hydrogen plasma treatment. The diamond-based PD with 30 min hydrogen plasma treatment exhibits an ultrahigh external quantum efficiency (EQE) of 9.4×106%, which are far superior to the previously reported diamond-based, AlGaN-based, and Ga2O3-based solar blind PDs. These results open up a facile route to prepare high-sensitivity photodetectors

Data origin type: other

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  © 2024 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

Keyword: Diamond, photodetector

Date published: 2024-05-02

Publisher: IEEE

Journal:

• 2024 IEEE 19th International Conference on Nano/Micro Engineered and Molecular Systems (NEMS) p. 1-4

Funding:

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4840

First published URL: https://doi.org/10.1109/nems60219.2024.10639852

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Updated at: 2024-10-11 14:30:31 +0900

Published on MDR: 2026-05-02 10:21:56 +0900