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説明:

Diamond-based solar blind deep ultraviolet (DUV) photodetectors (PDs) have attracted extensive attention due to their unique characteristics in extremely harsh environment. Until now, its low responsivity has not been sufficient to meet the needs of the application. Here, an ultrahigh performance diamond-based solar blind DUV PD was obtained by controlling the two-dimensional hole carrier concentration on the epilayer-free Ib-type diamond surface through adjusting the duration of hydrogen plasma treatment. The diamond-based PD with 30 min hydrogen plasma treatment exhibits an ultrahigh external quantum efficiency (EQE) of 9.4×106%, which are far superior to the previously reported diamond-based, AlGaN-based, and Ga2O3-based solar blind PDs. These results open up a facile route to prepare high-sensitivity photodetectors

データの性質: other

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• In Copyright
  

  © 2024 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

キーワード: Diamond, photodetector

刊行年月日: 2024-05-02

出版者: IEEE

掲載誌:

• 2024 IEEE 19th International Conference on Nano/Micro Engineered and Molecular Systems (NEMS) p. 1-4

研究助成金:

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4840

公開URL: https://doi.org/10.1109/nems60219.2024.10639852

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更新時刻: 2024-10-11 14:30:31 +0900

MDRでの公開時刻: 2026-05-02 10:21:56 +0900