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説明:

We have investigated the moir\'{e} Bloch bands of photoexcited electrons in image potential states (IPS) on graphene covered Ir(111) surfaces using high-energy-resolution angle-resolved two-photon photoemission spectroscopy. An energy gap of approximately 20 meV at the K point of the moiré Brillouin zone is resolved. The band structure is well reproduced by density functional theory (DFT) combined with the embedded Green’s function technique. A simplified periodic potential model, whose spatial distribution shows close agreement with the DFT results, also describes the system well. These findings demonstrate that the electronic band structure of photoexcited states can be engineered solely via moiré potential modulation. This opens a new avenue for excited-state band engineering and the design of ultrafast optoelectronic functionalities in moiré-engineered materials.

権利情報:

• In Copyright
  

キーワード: moire, two-photon photoemission, Unoccupied state

刊行年月日: 2025-10-24

出版者: American Physical Society (APS)

掲載誌:

• Physical Review B (ISSN: 24699950) vol. 112 issue. 16 L161408

研究助成金:

• Japan Society for the Promotion of Science 22H01960
• Ministry of Education, Culture, Sports, Science and Technology
• National Science and Technology Council NSTC 114–2923-M-A49-001-MY2
• National Science and Technology Council NSTC 113–2124-M-A49-007
• National Science and Technology Council NSTC 113–2628-M-A49-006-MY3
• National Science and Technology Council NSTC 114–2634-F-A49-001

原稿種別: 査読前原稿 (Author's original)

MDR DOI: https://doi.org/10.48505/nims.5830

公開URL: https://doi.org/10.1103/yg4g-x51r

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更新時刻: 2025-10-28 12:30:42 +0900

MDRでの公開時刻: 2025-10-28 12:16:25 +0900