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説明:

Already in 2012, Blom et al. reported (Nature Materials 2012, 11, 882) in semiconductingpolymers on a general electron-trap density of ≈ 3 × 1017 cm−3, centered at an energy of ≈3.6 eV below vacuum. It was suggested that traps have an extrinsic origin, with the water-oxygen complex [2(H2O)-O2] as a possible candidate, based on its electron affinity. However, further evidence is lacking and the origin of universal electron traps remained elusive. Here, in polymer diodes the temperature-dependence of reversible electron traps is investigated that develop under bias stress slowly over minutes to a density of 2 × 1017 cm−3, centered at an energy of 3.6 eV below vacuum. The trap build-up dynamics follows a 3rd-order kinetics, in line with that traps form via an encounter between three diffusing precursor particles. The accordance between universal and slowly evolving traps suggests that general electron traps in semiconducting polymers form via a triple-encounter process between oxygen and water molecules that form the suggested [2(H2O)-O2] complex as the trap origin.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Polymer light-emitting diodes, electron trap, charge trap dynamics, device physics, semiconducting polymer

刊行年月日: 2024-12-31

出版者: Taylor & Francis

掲載誌:

• Science and Technology of Advanced Materials (ISSN: 14686996) vol. 25 2312148

研究助成金:

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4403

公開URL: https://doi.org/10.1080/14686996.2024.2312148

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更新時刻: 2025-07-16 16:16:23 +0900

MDRでの公開時刻: 2024-02-07 16:30:22 +0900