Takeshi YASUDA
;
Kenji SAKAMOTO
Description:
(abstract)Exciplex-type bilayer organic light-emitting diodes (OLEDs) with ohmic contacts exhibited current density-voltage (J-V) characteristics that closely matched a simplified analytical model proposed by Nikitenko and Bässler. The analytical model is based on the following key assumptions: (i) complete hole-electron recombination at the interface between a hole transport layer (HTL) and an electron transport layer (ETL), (ii) ohmic contacts at the interfaces between metal electrodes and carrier transport layers, and (iii) electric-field-independent carrier mobilities in both HTL and ETL. The excellent matching shows that the simplified analytical model is sufficient to describe the J-V characteristics of the OLEDs. We also demonstrated that if the carrier mobility of one carrier transport layer is known, that of the other transport layer can be estimated using the equation derived by the simplified analytical model. The simplified analytical model provides a useful method to estimate carrier mobilities within carrier transport layers themselves in OLEDs.
Rights:
This is the Accepted Manuscript version of an article accepted for publication in Japanese Journal of Applied Physics. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://dx.doi.org/10.35848/1347-4065/ad8240
Keyword: OLED, exciplex, organic semiconductor
Date published: 2024-10-01
Publisher: IOP Publishing
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Manuscript type: Author's version (Accepted manuscript)
MDR DOI: https://doi.org/10.48505/nims.4890
First published URL: https://doi.org/10.35848/1347-4065/ad8240
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Updated at: 2025-10-23 08:30:21 +0900
Published on MDR: 2025-10-23 08:18:19 +0900
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YASUDA+et+al_2024_Jpn._J._Appl._Phys._10.35848_1347-4065_ad8240.pdf
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Supporting Information.pdf
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