Electrospun Stacked Dual‐Channel Transistors with High Electron Mobility Using a Planar Heterojunction Architecture

Bo He; Gang He; Shanshan Jiang; Jiangwei Liu; Elvira Fortunato; Rodrigo Martins

doi:10.1002/aelm.202201007

Journal article Electrospun Stacked Dual‐Channel Transistors with High Electron Mobility Using a Planar Heterojunction Architecture

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Adv Elect Materials - 2022 - He - Electrospun Stacked Dual‐Channel Transistors with High Electron Mobility Using a Planar (1).pdf

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Bo He, Gang He, Shanshan Jiang, Jiangwei Liu, Elvira Fortunato, Rodrigo Martins. Electrospun Stacked Dual‐Channel Transistors with High Electron Mobility Using a Planar Heterojunction Architecture. Advanced Electronic Materials. 2022, 9 (2), 2201007. https://doi.org/10.1002/aelm.202201007

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By far, despite the progress, there are no related reports on the construction of oxide heterojunction (HJ) based on electrospinning. Thus, developing electrospinning strategy to implement oxide-based heterojunction TFTs will help overcoming important bottlenecks associated with the level of performance and manufacturing of TFT technologies. Herein, the first realization of electrospinning-derived stacked dual-channel (DC) HJ TFTs composed of alternating layers of In₂O₃ and ZnO has been reported. By carefully designing the TFT channel architecture and varying the stacking density in both nanofibers, significant enhancement in both the electron mobility and TFT stress stability have been demonstrated. Meanwhile, our findings further elucidate the significant advance of electrospinning-derived double channel heterojunction transistors toward practical applications for future low-cost and high-performance electronics.

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Creative Commons BY Attribution 4.0 International

Keyword: Dual-Channel, Transistors

Date published: 2022-12-07

Publisher: Wiley

Journal:

Advanced Electronic Materials (ISSN: 2199160X) vol. 9 issue. 2 2201007

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Manuscript type: Publisher's version (Version of record)

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First published URL: https://doi.org/10.1002/aelm.202201007

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Updated at: 2024-01-05 22:13:45 +0900

Published on MDR: 2023-10-05 13:30:13 +0900

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