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By far, despite the progress, there are no related reports on the construction of oxide heterojunction (HJ) based on electrospinning. Thus, developing electrospinning strategy to implement oxide-based heterojunction TFTs will help overcoming important bottlenecks associated with the level of performance and manufacturing of TFT technologies. Herein, the first realization of electrospinning-derived stacked dual-channel (DC) HJ TFTs composed of alternating layers of In₂O₃ and ZnO has been reported. By carefully designing the TFT channel architecture and varying the stacking density in both nanofibers, significant enhancement in both the electron mobility and TFT stress stability have been demonstrated. Meanwhile, our findings further elucidate the significant advance of electrospinning-derived double channel heterojunction transistors toward practical applications for future low-cost and high-performance electronics.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Dual-Channel, Transistors

刊行年月日: 2022-12-07

出版者: Wiley

掲載誌:

• Advanced Electronic Materials (ISSN: 2199160X) vol. 9 issue. 2 2201007

研究助成金:

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1002/aelm.202201007

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更新時刻: 2024-01-05 22:13:45 +0900

MDRでの公開時刻: 2023-10-05 13:30:13 +0900