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Pr3+, Eu3+ and Tb3+ activated Gd2O2S (Gd2O2S:Ln), either in the powder or ceramic form, are well known for their wide applications in photoluminescence (PL), cathodoluminescence (CL) and X-ray excited luminescence (XEL) due to high efficiency. The film form of Gd2O2S:Ln, however, has not been reported up to date to the best of our knowledge. By hydrothermally reacting Gd(NO3)3, (NH4)2SO4 and urea, this work produced a Gd2(OH)2CO3SO4.H2O new compound (GOCSH) that was crystallized in the tetragonal system (space group P-421m) with a layered structure along the [001] crystallographic direction. Furthermore, macroscopically and microscopically uniform GOSCH:Ln films, constructed by vertical self-alignment of platelike crystallites, were successfully fabricated by applying heterogenous nucleation on quartz substrate. Taking the advantage of the exactly the same S/(Gd,Ln) molar ratio, Gd2O2SO4:Ln and Gd2O2S:Ln films of the same microstructures were then derived from the GOSCH:Ln films by annealing in air and hydrogen at 800 °C, respectively, without any additional sulfurization. The mechanism of film formation and the influence of deposition/annealing temperature on film quality were discussed. Aside from luminescence, the films all have microstructure-enabled super-hydrophobicity and are transparent in the visible light region (~70-93%). The multi-functional films, particularly those of Gd2O2S:Ln, may find potential application in luminescence, display, scintillation and microimaging.

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• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  

Keyword: Oriented film, Precursor, Gd2O2S, Luminescence , Super-hydrophobicity

Date published: 2022-10-18

Publisher: Elsevier BV

Journal:

• APPLIED SURFACE SCIENCE (ISSN: 01694332) vol. 609 p. 155323-155323

Funding:

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4346

First published URL: https://doi.org/10.1016/j.apsusc.2022.155323

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Updated at: 2024-10-18 16:30:30 +0900

Published on MDR: 2024-10-18 16:30:30 +0900