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Description:

The tunnel magnetoresistance (TMR) is one of the most important spintronic phenomena but its reduction at finite temperature is a severe drawback for applications. Here, we reveal a crucial determinant of the drawback, that is, the s−d exchange interaction between conduction s and localized d electrons at interfacial ferromagnetic layers. By calculating the temperature dependence of the TMR ratio in Fe/MgO/Fe(001), we show that the obtained TMR ratio significantly decreases with increasing temperature owing to the spin-flip scattering in the Δ1 state induced by the s−d exchange interaction. The material dependence of the coupling constant Jsd is also discussed on the basis of a nonempirical method.

Rights:

• Creative Commons BY Attribution 4.0 International
  

Keyword: Tunnel magnetoresistance, Exchange interaction, Magnetic tunnel junction, Spintronics

Date published: 2021-11-03

Publisher: American Physical Society (APS)

Journal:

• Physical Review B (ISSN: 1550235X) vol. 104 issue. 18 L180403

Funding:

• Japan Society for the Promotion of Science JP16H06332
• Japan Society for the Promotion of Science JP17H06152
• Japan Society for the Promotion of Science JP20H02190
• Japan Society for the Promotion of Science JP20K14782

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1103/physrevb.104.l180403

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Updated at: 2024-04-11 16:30:19 +0900

Published on MDR: 2024-04-11 16:30:19 +0900