Kota Munefusa
;
Erika Fukushi
;
Takayuki Harada
;
Hiroyuki Oguchi
Description:
(abstract)We present a new film growth method designed specifically for growing metal hydride thin films that we name “H-radical reactive infrared laser deposition”. This approach leverages hydrogen radicals (H·) to achieve rapid and complete metal hydrogenation, leading to high-purity hydride phases. We demonstrate the effectiveness of this method through the growth of LiH epitaxial thin films, where the H· supply eliminates Li precipitates and enhances crystallinity. Additionally, the use of an infrared laser minimizes film–substrate reactions, reducing the level of impurity formation. To explore the material tunability of this method, we successfully controlled film orientation and achieved Mg doping in LiH. Our findings establish H-radical reactive infrared laser deposition as a promising method for fabricating high-quality metal hydride thin films with tailored properties.
Rights:
This document is the unedited Author’s version of a Submitted Work that was subsequently accepted for publication in Inorganic Chemistry, copyright © 2025 American Chemical Society after peer review. To access the final edited and published work see https://doi.org/10.1021/acs.inorgchem.4c05449.
Keyword: Hydride, Thin films
Date published: 2025-04-28
Publisher: American Chemical Society (ACS)
Journal:
Funding:
Manuscript type: Author's version (Submitted manuscript)
MDR DOI: https://doi.org/10.48505/nims.5587
First published URL: https://doi.org/10.1021/acs.inorgchem.4c05449
Related item:
Other identifier(s):
Contact agent:
Updated at: 2025-07-14 16:30:24 +0900
Published on MDR: 2025-07-14 16:17:18 +0900
| Filename | Size | |||
|---|---|---|---|---|
| Filename |
Manuscript_File_KM.pdf
(Thumbnail)
application/pdf |
Size | 1.3 MB | Detail |