Download file (1.3MB)
Download as zip (1.11MB)

コレクション

引用

説明:

We present a new film growth method designed specifically for growing metal hydride thin films that we name “H-radical reactive infrared laser deposition”. This approach leverages hydrogen radicals (H·) to achieve rapid and complete metal hydrogenation, leading to high-purity hydride phases. We demonstrate the effectiveness of this method through the growth of LiH epitaxial thin films, where the H· supply eliminates Li precipitates and enhances crystallinity. Additionally, the use of an infrared laser minimizes film–substrate reactions, reducing the level of impurity formation. To explore the material tunability of this method, we successfully controlled film orientation and achieved Mg doping in LiH. Our findings establish H-radical reactive infrared laser deposition as a promising method for fabricating high-quality metal hydride thin films with tailored properties.

権利情報:

• In Copyright
  This document is the unedited Author’s version of a Submitted Work that was subsequently accepted for publication in Inorganic Chemistry, copyright © 2025 American Chemical Society after peer review. To access the final edited and published work see https://doi.org/10.1021/acs.inorgchem.4c05449.

キーワード: Hydride, Thin films

刊行年月日: 2025-04-28

出版者: American Chemical Society (ACS)

掲載誌:

• Inorganic Chemistry (ISSN: 00201669) vol. 64 issue. 16 p. 7945-7950

研究助成金:

• Fujikura Foundation
• Ministry of Education, Culture, Sports, Science and Technology 18H01727
• Ministry of Education, Culture, Sports, Science and Technology 19K22225
• Ministry of Education, Culture, Sports, Science and Technology 24K21249
• Ministry of Education, Culture, Sports, Science and Technology 7K19 K22225
• National Institute for Materials Science 2022-87
• National Institute for Materials Science 2023-024
• Iketani Science and Technology Foundation 0361115-A

原稿種別: 査読前原稿 (Author's original)

MDR DOI: https://doi.org/10.48505/nims.5587

公開URL: https://doi.org/10.1021/acs.inorgchem.4c05449

関連資料:

その他の識別子:

連絡先:

更新時刻: 2025-07-14 16:30:24 +0900

MDRでの公開時刻: 2025-07-14 16:17:18 +0900