Article Direct Analysis of Stacked Au/Ti/In2O3/Al2O3/p+-Si Transport Mechanisms Using Operando Hard X-ray Photoelectron Spectroscopy

Ibrahima Gueye ORCID (National Institute for Materials ScienceROR) ; Shigenori Ueda SAMURAI ORCID (National Institute for Materials ScienceROR) ; Atsushi Ogura ; Takahiro Nagata SAMURAI ORCID (National Institute for Materials ScienceROR)

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Ibrahima Gueye, Shigenori Ueda, Atsushi Ogura, Takahiro Nagata. Direct Analysis of Stacked Au/Ti/In2O3/Al2O3/p+-Si Transport Mechanisms Using Operando Hard X-ray Photoelectron Spectroscopy. ACS Applied Electronic Materials. 2024, 6 (5), 3237-3248. https://doi.org/10.1021/acsaelm.4c00049

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(abstract)

Oxygen transport mechanisms for two different Au/Ti/In2O3/Al2O3/p+-Si samples were experimentally evaluated with hard X-ray photoelectron spectroscopy (HAXPES). The deposition temperature for atomic layer deposition (ALD) of In2O3, as well as the bias voltages applied on the entire stacked structures,were the main parameters used in the work. Chemical analyses of the In2O3 layers deposited at 150 ◦C and 200 ◦C for the samples named T_150 and T_200, respectively, revealed a decreased carbon impurity content in the host In2O3 used as a dopant. Ex-situ interfacial analysis of In2O3/Al2O3 also indicated oxygen transport from Al2O3 to In2O3. Moreover, we observed that the Ti adhesion metal attracted oxygen and carbon from the In2O3 to form TiO2 and TiC conductive interlayers. Furthermore, operando-HAXPES under an applied bias voltage also revealed that In2O3 underwent phase separation, likely due to variations in the space charge (carriers) around the In2O3/Al2O3 interface for the T_150 sample. Finally, our results emphasize the prominent roles of migration for the ionic oxygen/carbon species and the uncompensated interfacial charge formed by the bias voltage for the metal-semiconductor-oxide stacked structure.

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  • In Copyright

    This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Electronic Materials, copyright © 2024 American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsaelm.4c00049

Keyword: Operando, HAXPES, Interfaces, In2O3, Al2O3, Band bending, Chemical-structures

Date published: 2024-05-28

Publisher: American Chemical Society (ACS)

Journal:

  • ACS Applied Electronic Materials (ISSN: 26376113) vol. 6 issue. 5 p. 3237-3248

Funding:

  • Japan Society for the Promotion of Science 20H02188

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4829

First published URL: https://doi.org/10.1021/acsaelm.4c00049

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Updated at: 2025-05-15 08:30:10 +0900

Published on MDR: 2025-05-15 08:17:35 +0900

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