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High-resistive GaN has been studied for epitaxial substrate of lateral power devices. Fe-, C-, Mn- and Zn-doped GaNs were reported to exhibit high resistivity with the concentration of ~1 × 1018 cm−3. However, less impurites concentrations are more favorable for the growth of GaN monocrystal. Therefore, it is nescessary to search other dopants for GaN which realize high resistivity with the concentration of less than 1 × 1018 cm−3. This study shows that Ni-doped GaN monocrystals were grown on GaN substrates via HVPE using NiCl2 as the precursor for the first time. Two Ni-doped GaN substrates with Ni concentrations of 2.7 × 1017 cm−3 and 2.9 × 1018 cm−3 were obtained varying the partial pressure of NiCl2. The dependence of resistivities for the Ni-doped GaN on temperature were measured by the Hall effect method. Ni-doped GaN with the concentration of 2.7 × 1017 cm−3 exhibited higher resistivty than that with the concentration of 2.9 × 1018 cm−3. Using calculation with charge neutrality condition, the depth of Ni impurity in GaN was determined 1.4~1.5 eV, which indicated that the high resistivity of Ni-doped GaN was due to the deep acceptor of Ni.

権利情報:

• In Copyright
  This is the peer reviewed version of the following article: Realization of High-Resistive Ni-Doped GaN Crystal by Hydride Vapor-Phase Epitaxy, which has been published in final form at https://doi.org/10.1002/pssb.202300584. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions. This article may not be enhanced, enriched or otherwise transformed into a derivative work, without express permission from Wiley or by statutory rights under applicable legislation. Copyright notices must not be removed, obscured or modified. The article must be linked to Wiley’s version of record on Wiley Online Library and any embedding, framing or otherwise making available the article or pages thereof by third parties from platforms, services and websites other than Wiley Online Library must be prohibited.

キーワード: GaN HVPE

刊行年月日: 2024-03-11

出版者: Wiley

掲載誌:

• physica status solidi (b) (ISSN: 03701972)

研究助成金:

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4443

公開URL: https://doi.org/10.1002/pssb.202300584

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更新時刻: 2025-03-11 12:30:23 +0900

MDRでの公開時刻: 2025-03-11 12:30:24 +0900