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Hydrogen-terminated diamond field-effect transistors (FETs) using a hexagonal boron nitride (h-BN) gate insulator were fabricated on a diamond surface with reduced surface roughness in the direction of source/drain electrodes. The diamond surface was prepared on a mesa structure using chemical vapor deposition with a low methane concentration. The hydrogen-terminated surface was laminated with the h-BN gate insulator without air exposure to prevent the adsorption of atmospheric surface acceptors. The hydrogen-terminated diamond FET exhibited a high mobility of ≈1000 cm^2/(Vs) at room temperature. We performed theoretical analysis on the temperature and carrier density dependences of mobility, which suggested that Coulomb and surface roughness scattering were effectively reduced. The high mobility obtained in this study indicates the high potential of diamond as a semiconducting material. This study can contribute to the future development of diamond devices.

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  This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Yosuke Sasama, Takuya Iwasaki, Masataka Imura, Kenji Watanabe, Takashi Taniguchi, Yamaguchi Takahide; Enhanced channel mobility of hexagonal boron nitride/hydrogen-terminated diamond heterojunction field-effect transistor. Appl. Phys. Lett. 6 October 2025; 127 (14): 143502 and may be found at https://doi.org/10.1063/5.0272041.

Keyword: diamond, field-effect transistors, hexagonal boron nitride

Date published: 2025-10-06

Publisher: AIP Publishing

Journal:

• Applied Physics Letters (ISSN: 00036951) vol. 127 issue. 14 143502

Funding:

• New Energy and Industrial Technology Development Organization JPNP14004
• Japan Society for the Promotion of Science JP22H01962
• Ministry of Education, Culture, Sports, Science and Technology JPMXP1224NM5213

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5802

First published URL: https://doi.org/10.1063/5.0272041

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Updated at: 2025-10-21 16:06:02 +0900

Published on MDR: 2025-10-21 15:43:26 +0900