Download file (6.7MB)
Download as zip (6.69MB)

コレクション

引用

説明:

We have investigated the dependence of the depth resolution of Auger depth profiles of InP/GaInAsP multilayer specimens on the sputtering rate, and the surface roughness caused by the ion bombardment. Ar ions having energies of 1.0 and 3.0 kV were used for the sputtering. The depth resolution of the measured Auger depth profiles was improved by increasing the sputtering rate.
Thus we obtained, by 3.0 kV Ar ion sputtering, excellent Auger depth profiles with constant depth resolution from the outermost surface of the samples. We found that the obtained depth resolutions of the trailing edge group were largely different from those of leading edges in several specimens.
We also found that the resulting resolution of Auger depth profiles could be determined by the surface roughness caused by the Ar ion sputtering.

権利情報:

キーワード: argon ion sputtering, InP/GaInAsP multilayer specimens, Auger depth profiling analysis

刊行年月日: 2011-06-10

出版者: Surface Science Society of Japan

掲載誌:

研究助成金:

原稿種別: 査読前原稿 (Author's original)

MDR DOI:

公開URL: https://doi.org/10.1380/jsssj.17.38

関連資料:

その他の識別子:

連絡先:

更新時刻: 2022-10-03 02:01:29 +0900

MDRでの公開時刻: 2021-11-16 19:30:53 +0900