Achieving nearly barrier free transport in high mobility ReS2 phototransistors with van der Waals contacts

Shubhrasish Mukherjee; Gaurab Samanta; Md Nur Hasan; Shubhadip Moulick; Ruta Kulkarni; Kenji Watanabe; Takashi Taniguchi; Arumugum Thamizhavel; Debjani Karmakar; Atindra Nath Pal

doi:10.1038/s41699-024-00507-3

Journal article Achieving nearly barrier free transport in high mobility ReS2 phototransistors with van der Waals contacts

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Shubhrasish Mukherjee, Gaurab Samanta, Md Nur Hasan, Shubhadip Moulick, Ruta Kulkarni, Kenji Watanabe, Takashi Taniguchi, Arumugum Thamizhavel, Debjani Karmakar, Atindra Nath Pal. Achieving nearly barrier free transport in high mobility ReS2 phototransistors with van der Waals contacts. npj 2D Materials and Applications. 2024, 8 (1), 71. https://doi.org/10.1038/s41699-024-00507-3

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Focusing on Rhenium disulfide (ReS2), a group VII transition metal di-chalcogenides (TMDC), being a
promising contender system for future nanoelectronics and optoelectronics, here, we present an innovative pathway to experimentally achieve an almost barrier-free contact for the ReS2 field effect transistors (FETs) by using few layered graphene as contact electrodes, further supported by comparative first-principles analysis. Such barrier-free contacts enable the observation of metal-to- insulator transition with enhanced room temperature carrier mobility up to 25 cm2/Vs, linear Ids-Vds characteristic down to 80 K, along with the reduction of 1/f noise by more than two orders of magnitude. We further demonstrate a highly responsive gate- tunable phototransistor (R > 106 A/W) at an illumination wavelength of 633 nm. This work demonstrates a straightforward strategy to unlock the full potential of ReS2 for CMOS compatible future electronic and optoelectronic devices.

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