Download file (2.06 MB)
Download as zip (1.52 MB)

Collection

Citation

Description:

Focusing on Rhenium disulfide (ReS2), a group VII transition metal di-chalcogenides (TMDC), being a
promising contender system for future nanoelectronics and optoelectronics, here, we present an innovative pathway to experimentally achieve an almost barrier-free contact for the ReS2 field effect transistors (FETs) by using few layered graphene as contact electrodes, further supported by comparative first-principles analysis. Such barrier-free contacts enable the observation of metal-to- insulator transition with enhanced room temperature carrier mobility up to 25 cm2/Vs, linear Ids-Vds characteristic down to 80 K, along with the reduction of 1/f noise by more than two orders of magnitude. We further demonstrate a highly responsive gate- tunable phototransistor (R > 106 A/W) at an illumination wavelength of 633 nm. This work demonstrates a straightforward strategy to unlock the full potential of ReS2 for CMOS compatible future electronic and optoelectronic devices.

Rights:

• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  

Keyword: ReS2, barrier-free contact, phototransistor

Date published: 2024-11-05

Publisher: Springer Science and Business Media LLC

Journal:

• npj 2D Materials and Applications (ISSN: 23977132) vol. 8 issue. 1 71

Funding:

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1038/s41699-024-00507-3

Related item:

Other identifier(s):

Contact agent:

Updated at: 2025-02-05 12:30:44 +0900

Published on MDR: 2025-02-05 12:30:44 +0900