Download file (2.06MB)
Download as zip (1.52MB)

コレクション

引用

説明:

Focusing on Rhenium disulfide (ReS2), a group VII transition metal di-chalcogenides (TMDC), being a
promising contender system for future nanoelectronics and optoelectronics, here, we present an innovative pathway to experimentally achieve an almost barrier-free contact for the ReS2 field effect transistors (FETs) by using few layered graphene as contact electrodes, further supported by comparative first-principles analysis. Such barrier-free contacts enable the observation of metal-to- insulator transition with enhanced room temperature carrier mobility up to 25 cm2/Vs, linear Ids-Vds characteristic down to 80 K, along with the reduction of 1/f noise by more than two orders of magnitude. We further demonstrate a highly responsive gate- tunable phototransistor (R > 106 A/W) at an illumination wavelength of 633 nm. This work demonstrates a straightforward strategy to unlock the full potential of ReS2 for CMOS compatible future electronic and optoelectronic devices.

権利情報:

• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  

キーワード: ReS2, barrier-free contact, phototransistor

刊行年月日: 2024-11-05

出版者: Springer Science and Business Media LLC

掲載誌:

• npj 2D Materials and Applications (ISSN: 23977132) vol. 8 issue. 1 71

研究助成金:

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1038/s41699-024-00507-3

関連資料:

その他の識別子:

連絡先:

更新時刻: 2025-02-05 12:30:44 +0900

MDRでの公開時刻: 2025-02-05 12:30:44 +0900