Hong Yan
;
Kotaro Fujii
;
Yoshitaka Matsushita
;
Masatomo Yashima
;
Kazunari Yamaura
;
Yoshihiro Tsujimoto
Description:
(abstract)Single crystals of the non-centrosymmetric oxysulfides Ln3Ga3Ge2S3O10 (Ln = La, Ce, Pr, Nd) in a hexagonal space group P-62c were grown by a flux crystal growth method using a eutectic BaCl2–NaCl molten salt. Single-crystal X-ray diffraction analysis of them revealed that the Ga and Ge atoms were located on the 6g and 4f sites, which were tetrahedrally coordinated with two O and two S atoms, and four O atoms, respectively. In the structure, the GaS2O2 and GeO4 tetrahedra form 1∞[Ga3S3O3] triangular tubes and Ge2O7 tetrahedral dimers aligned along the c axis, which are surrounded by LaS2O6 square prisms in the ab plane. Neutron powder diffraction studies on polycrystalline samples of La3Ga3Ge2S3O10, and Nd3Ga3Ge2S3O10 which were prepared by high-temperature solid state reactions supported the Ga/Ge cation order determined by the single-crystal structure analysis. UV-vis-NIR absorption spectra revealed band gaps larger than 4.60 eV for La3Ga3Ge2S3O10, Pr3Ga3Ge2S3O10, and Nd3Ga3Ge2S3O10, while Ce3Ga3Ge2S3O10 was found to have a small band gap value of 3.51 eV because of Ce-4f1 electronic configuration.
Rights:
Keyword: flux crystal growth, oxysulfide, nonlinear optical materials, bandgap engineering
Date published: 2025-06-12
Publisher: Royal Society of Chemistry (RSC)
Journal:
Funding:
Manuscript type: Publisher's version (Version of record)
MDR DOI:
First published URL: https://doi.org/10.1039/d5dt01100k
Related item:
Other identifier(s):
Contact agent:
Updated at: 2025-07-02 16:30:25 +0900
Published on MDR: 2025-07-02 16:24:28 +0900
| Filename | Size | |||
|---|---|---|---|---|
| Filename |
d5dt01100k.pdf
(Thumbnail)
application/pdf |
Size | 1.38 MB | Detail |