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In this work, we achieved the in-situ growth of graphene on diamond (100) substrates via rapid thermal annealing (RTA) at 950°C for 2 minutes, as an initial step towards the fabrication of GOD heterostructures for MEMS sensor applications. Thin nickel films (10 to 60 nm) were deposited on diamond substrates by an E-gun evaporator and served as catalytic layers for graphene growth. After annealing, Ni films were chemically removed using aqueous iron (III) chloride (FeCl₃) solution. Raman spectrum of the GOD sample exhibited prominent G (~1580 cm⁻¹), 2D (~2700 cm⁻¹), and diamond (~1332 cm⁻¹) peaks, confirming the successful formation of layered graphene on diamond. The full width at half maximum (FWHM) of the 2D band was approximately 77 cm⁻¹, and the I2D/IG intensity ratio was about 0.58, indicating that the graphene layers formed on the diamond substrate consisted of multilayer graphene. Raman spectrum (bottom) of the bare diamond (100) substrate was measured as a reference for comparison. These results offer great potential for robust and multifunctional diamond MEMS sensing devices.

権利情報:

• In Copyright
  

キーワード: Diamond, MEMS

会議: 2025年第86回応用物理学会秋季学術講演会 (2025-09-07 - 2025-09-10)

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原稿種別: 論文以外のデータ

MDR DOI: https://doi.org/10.48505/nims.5858

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更新時刻: 2025-11-06 12:30:32 +0900

MDRでの公開時刻: 2025-11-06 12:24:56 +0900