Download file (626KB)
Download as zip (523KB)

コレクション

引用

説明:

A proper understanding of the molecular transport occurring in the near-surface region is a crucial prerequisite for the successful application of amorphous chalcogenides. This study provides information on the surface pattern decay in bulk samples and thin films of amorphous As20Se80. Single-period sinusoidal gratings were embossed into the sample surfaces, and subsequent annealing-induced decay or flattening of the surface grating was analyzed to obtain the rate constant of the process. The studies were performed in bulk samples, thermally evaporated thin films, and, for the first time, in solution processed chalcogenide thin films prepared by spin-coating. The obtained data provide a comparison of near-surface molecular transport in the As20Se80 amorphous material prepared by different methods.

権利情報:

• In Copyright
  

キーワード: Phase-change, Pulsed laser deposition, Thin films, Localization of electrical charge, Sn-Se

刊行年月日: 2025-08-28

出版者: Royal Society of Chemistry (RSC)

掲載誌:

• Physical Chemistry Chemical Physics (ISSN: 14639084) vol. 27 issue. 38 p. 20546-20556

研究助成金:

• Grantová Agentura Ceské Republiky 24-10480S
• Ministerstvo Školství, Mládeže a Telovýchovy LM2023037

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.8690

公開URL: https://doi.org/10.1039/d5cp02360b

関連資料:

その他の識別子:

連絡先:

更新時刻: 2026-11-02 10:04:00 +0900

MDRでの公開時刻: 2026-11-02 12:33:19 +0900