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There is a current lack of commercial p-type counterpart to state of the art n-type transparent conductors. Copper (I) iodide (CuI) is the leading p-type candidate, attracting major attention for promising electrical conductivities, partially by chalcogenide doping (O, S, Se, Te). Such improvements lead to promising future integration of CuI in transparent electronic devices such as thermoelectric generators, thin film transistors, and a hole transport layer in perovskite solar cells. The role of chalcogenide doping in CuI is to improve the carrier concentration in CuI, however, the effect of tellurium is yet to be explored in heavily p-type doped CuI. In this work we investigate the role of tellurium in heavily intrinsically doped p-type CuI. We report the effects of tellurium doping (up to 2.4 % Te) in CuI thin films and study the variation in electrical properties of the material. The point defects introduced by ion implantation; the method used to introduce the tellurium led to a progressive reduction in the films’ work functions from 4.9 eV to 4.5 eV. This effect has major repercussions on the other measured electrical properties, such as the electrical conductivity, which is decreased by 3 orders of magnitude, while the Seebeck coefficient is increased by 80 %. We conduct density functional theory calculations to help explicate the effect of tellurium doping on the valence band structure of CuI. Consequently, this work shows that the Fermi energy in heavily p-type doped CuI can be readily tuned by Te doping.

権利情報:

• In Copyright
  

キーワード: thermoelectric

刊行年月日: 2024-07-14

出版者: Elsevier BV

掲載誌:

• Materials Today Physics (ISSN: 25425293) vol. 46 p. 101513-101513 101513

研究助成金:

• MBIE
• JST-Mirai Program
• Royal Society of New Zealand Marsden Fund

原稿種別: 査読前原稿 (Author's original)

MDR DOI: https://doi.org/10.48505/nims.4808

公開URL: https://doi.org/10.1016/j.mtphys.2024.101513

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更新時刻: 2024-10-08 16:30:45 +0900

MDRでの公開時刻: 2024-10-08 16:30:45 +0900