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Tin-perovskite solar cells (Sn-PSCs) have low energy conversion efficiency and stability due to facile oxidation of Sn2+ during precursor solution preparation and film growth. Herein, we introduced formohydrazide (FHZ) as a bidentate ligand into the Sn-halide perovskite (Sn-HaP) to improve the optoelectronic properties. This approach is found to be effective for the suppression of Sn-oxidation and interfacial energy band modulation. The depth profile distribution confirmed that the FHZ additive is primarily located on surfaces and the hole transport layer (HTL)/Sn-HaP interface with partly capping at the grain boundaries, which offers a reducing ambient in the Sn-HaP film. Therefore, the device with FHZ demonstrated a device efficiency of 12.87% (9.93% control) with enhanced open circuit voltage from ∼0.734 to 0.874 V and improved operational device stability. The device analysis suggests that the FHZ additive alleviates the bulk and interface defect in the Sn-PSC with −NH2 and −O═C bidentate bonding to Sn-HaP, which is supported by theoretical calculations. Thus, this work corroborates the importance of multidentate ligands for modulating the film morphology and defect chemistry in the Sn-perovskite for high efficiency and superior device stability.

権利情報:

• In Copyright
  

  This document is the unedited Author’s version of a Submitted Work that was subsequently accepted for publication in Chemistry of Materials, copyright © 2023 American Chemical Society after peer review. To access the final edited and published work see https://doi.org/10.1021/acs.chemmater.3c00243.

キーワード: Tin Perovskite, Sn oxidation, Additive Engineering, Bidentate Molecule

刊行年月日: 2023-06-13

出版者: American Chemical Society (ACS)

掲載誌:

• Chemistry of Materials (ISSN: 15205002) vol. 35 issue. 11 p. 4250-4258

研究助成金:

• Japan Science and Technology Agency JPMJMI21E6

原稿種別: 査読前原稿 (Author's original)

MDR DOI: https://doi.org/10.48505/nims.5055

公開URL: https://doi.org/10.1021/acs.chemmater.3c00243

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更新時刻: 2024-11-29 16:31:38 +0900

MDRでの公開時刻: 2024-11-29 16:31:38 +0900