Michele Masseroni
;
Isaac Soltero
;
James G. McHugh
;
Igor Rozhansky
;
Xue Li
;
Alexander Schmidhuber
;
Markus Niese
;
Takashi Taniguchi
(National Institute for Materials Science)
;
Kenji Watanabe
(National Institute for Materials Science)
;
Vladimir I. Fal’ko
;
Thomas Ihn
;
Klaus Ensslin
Description:
(abstract)The conduction band minima of multilayer molybdenum disulfide (MoS2) are expected to be centered at the Q point (midway between the Γ and K points) of the hexagonal Brillouin zone. In this study, we conduct magnetotransport experiments on four-layer MoS2, revealing highly tunable gate-induced K and Q valley populations. By combining our experimental results with a hybrid k · p tight-binding model that accounts for interlayer screening effects in a self-consistent manner, we demonstrate that the conduction band minima of four-layer MoS2 at low gate bias are indeed centered at the Q points. However, as in typical experiments higher gate voltages are applied, charge accumulation in the layer adjacent to the positive gate electrode leads to a transition of the band edge from the Q points to the K points. Additionally, we extend our model to bilayer and three-layer MoS2, successfully reconciling previously reported discrepancies between experimental data and density functional theory calculations.
Rights:
Keyword: MoS2 , band edge, gate-tunable
Date published: 2025-07-02
Publisher: American Chemical Society (ACS)
Journal:
Funding:
Manuscript type: Publisher's version (Version of record)
MDR DOI:
First published URL: https://doi.org/10.1021/acs.nanolett.5c01998
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Updated at: 2026-02-18 08:30:19 +0900
Published on MDR: 2026-02-17 17:57:19 +0900
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