Michele Masseroni
;
Isaac Soltero
;
James G. McHugh
;
Igor Rozhansky
;
Xue Li
;
Alexander Schmidhuber
;
Markus Niese
;
Takashi Taniguchi
(National Institute for Materials Science)
;
Kenji Watanabe
(National Institute for Materials Science)
;
Vladimir I. Fal’ko
;
Thomas Ihn
;
Klaus Ensslin
説明:
(abstract)The conduction band minima of multilayer molybdenum disulfide (MoS2) are expected to be centered at the Q point (midway between the Γ and K points) of the hexagonal Brillouin zone. In this study, we conduct magnetotransport experiments on four-layer MoS2, revealing highly tunable gate-induced K and Q valley populations. By combining our experimental results with a hybrid k · p tight-binding model that accounts for interlayer screening effects in a self-consistent manner, we demonstrate that the conduction band minima of four-layer MoS2 at low gate bias are indeed centered at the Q points. However, as in typical experiments higher gate voltages are applied, charge accumulation in the layer adjacent to the positive gate electrode leads to a transition of the band edge from the Q points to the K points. Additionally, we extend our model to bilayer and three-layer MoS2, successfully reconciling previously reported discrepancies between experimental data and density functional theory calculations.
権利情報:
キーワード: MoS2 , band edge, gate-tunable
刊行年月日: 2025-07-02
出版者: American Chemical Society (ACS)
掲載誌:
研究助成金:
原稿種別: 出版者版 (Version of record)
MDR DOI:
公開URL: https://doi.org/10.1021/acs.nanolett.5c01998
関連資料:
その他の識別子:
連絡先:
更新時刻: 2026-02-18 08:30:19 +0900
MDRでの公開時刻: 2026-02-17 17:57:19 +0900
| ファイル名 | サイズ | |||
|---|---|---|---|---|
| ファイル名 |
masseroni-et-al-2025-gate-tunable-band-edge-in-few-layer-mos2.pdf
(サムネイル)
application/pdf |
サイズ | 1.73MB | 詳細 |