Modulation of electrical potential and conductivity in an atomic-layer semiconductor heterojunction

Yu Kobayashi; Shoji Yoshida; Ryuji Sakurada; Kengo Takashima; Takahiro Yamamoto; Tetsuki Saito; Satoru Konabe; Takashi Taniguchi; Kenji Watanabe; Yutaka Maniwa; Osamu Takeuchi; Hidemi Shigekawa; Yasumitsu Miyata

doi:10.1038/srep31223

論文 Modulation of electrical potential and conductivity in an atomic-layer semiconductor heterojunction

Yu Kobayashi ; Shoji Yoshida ; Ryuji Sakurada ; Kengo Takashima ; Takahiro Yamamoto ; Tetsuki Saito ; Satoru Konabe ; Takashi Taniguchi (National Institute for Materials Science) ; Kenji Watanabe (National Institute for Materials Science) ; Yutaka Maniwa ; Osamu Takeuchi ; Hidemi Shigekawa ; Yasumitsu Miyata

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Yu Kobayashi, Shoji Yoshida, Ryuji Sakurada, Kengo Takashima, Takahiro Yamamoto, Tetsuki Saito, Satoru Konabe, Takashi Taniguchi, Kenji Watanabe, Yutaka Maniwa, Osamu Takeuchi, Hidemi Shigekawa, Yasumitsu Miyata. Modulation of electrical potential and conductivity in an atomic-layer semiconductor heterojunction. Scientific Reports. 2016, 6 (1), 31223. https://doi.org/10.1038/srep31223

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(abstract)

We report conductivity enhancement and electrical potential modulation of heterojunction interfaces based on TMDC bilayers consisted of MoS2 and WS2. Scanning tunneling analyses showed the formation of 1D confining potential in the valence (conduction) band, as well as bandgap narrowing around the heterointerface. The modulation of electronic properties were also probed as the increase of current in conducting atomic force microscopy. The observed band bending can be explained by the presence of 1D fixed charges due to piezoelectric interface polarization. The present findings indicate that the atomic layer heterojunctions provide a novel approach to realizing tunable 1D electrical potential for embedded quantum wires and ultrashort barriers of electrical transport.

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