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Tin monoxide (SnO) is a p-type oxide semiconductor whose electronic properties can be widely modified through atomic-scale engineering. Using first-principles density functional theory, we investigate the effects of transition-metal doping and edge engineering in monolayer SnO. Cobalt doping induces pronounced spin polarization near the Fermi level through Co 3d–O 2p hybridization, leading to a nearly spin-selective electronic structure. We further show that SnO nanoribbons host intrinsic edge-localized states. For chiral nanoribbons oriented along a low-symmetry direction of the square lattice, oxygen-rich edges are thermodynamically most stable and remain semiconducting, whereas tin-containing edges support metallic one-dimensional conduction channels. These results establish design principles for controlling electronic states in low-dimensional p-type oxide nanostructures.

Rights:

• Creative Commons BY Attribution 4.0 International
  

Keyword: Dilute magnetism, edge-state, monolayer, SnO

Date published: 2026-06-02

Publisher: Royal Society of Chemistry (RSC)

Journal:

• Nanoscale Advances (ISSN: 25160230) vol. 8 issue. 14 p. 4101-4108

Funding:

• Sumitomo Foundation 2401203
• Japan Society for the Promotion of Science JP21H01019
• Japan Society for the Promotion of Science JP22H05473
• Japan Society for the Promotion of Science JP25K01609
• Japan Society for the Promotion of Science JP26H02222
• Japan Science and Technology Agency JPMJCR19T1

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1039/d6na00140h

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Updated at: 2026-07-15 06:50:06 +0900

Published on MDR: 2026-07-15 10:36:59 +0900