Kei Kinoshita
;
Rai Moriya
;
Shota Okazaki
;
Yijin Zhang
;
Satoru Masubuchi
;
Kenji Watanabe
(National Institute for Materials Science
)
;
Takashi Taniguchi
(National Institute for Materials Science
)
;
Takao Sasagawa
;
Tomoki Machida
Description:
(abstract)Few-layer-thick transition metal dichalcogenides have recently been found to exhibit discrete subbands, called van der Waals quantum well (vdW-QW) states, owing to the out-of-plane quantum confinement. The vdW-QW in the conduction band (CB) remained unelucidated due to the difficulty to access these states with conventional methods. Here we investigate the vdW-QW in the CB of 3- layer (3L) WSe2 using resonant tunneling in 3L WSe2/h-BN/3L WSe2 junction under the control of inter-layer twist angle θint between two WSe2 layers. Measured current–voltage characteristics exhibit multiple resonant tunneling peaks, and their positions are continuously modulated in the broad range of θint from 0 to 60°. The results showed good agreement with calculated angular dispersion of the CB, including a crossing of spin-polarized subbands and a presence of saddle point. Our twist-controlled resonant tunneling overcome difficulties in measuring the momentum-resolved electronic structure and unveil the unique vdW-QW structure in the CB of 3L-WSe2.
Rights:
Keyword: Van der Waals quantum well, twisted-resonant tunneling, WSe2
Date published: 2023-12-26
Publisher: American Physical Society (APS)
Journal:
Funding:
Manuscript type: Publisher's version (Version of record)
MDR DOI:
First published URL: https://doi.org/10.1103/physrevresearch.5.043292
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Updated at: 2025-02-28 08:31:22 +0900
Published on MDR: 2025-02-28 08:31:22 +0900
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