Article Polarity-dependent twist-controlled resonant tunneling device based on few-layer W Se 2

Kei Kinoshita ; Rai Moriya ; Shota Okazaki ; Yijin Zhang ; Satoru Masubuchi ; Kenji Watanabe SAMURAI ORCID (National Institute for Materials ScienceROR) ; Takashi Taniguchi SAMURAI ORCID (National Institute for Materials ScienceROR) ; Takao Sasagawa ; Tomoki Machida

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Citation
Kei Kinoshita, Rai Moriya, Shota Okazaki, Yijin Zhang, Satoru Masubuchi, Kenji Watanabe, Takashi Taniguchi, Takao Sasagawa, Tomoki Machida. Polarity-dependent twist-controlled resonant tunneling device based on few-layer W Se 2 . Physical Review Research. 2023, 5 (4), 043292. https://doi.org/10.1103/physrevresearch.5.043292
SAMURAI

Description:

(abstract)

Few-layer-thick transition metal dichalcogenides have recently been found to exhibit discrete subbands, called van der Waals quantum well (vdW-QW) states, owing to the out-of-plane quantum confinement. The vdW-QW in the conduction band (CB) remained unelucidated due to the difficulty to access these states with conventional methods. Here we investigate the vdW-QW in the CB of 3- layer (3L) WSe2 using resonant tunneling in 3L WSe2/h-BN/3L WSe2 junction under the control of inter-layer twist angle θint between two WSe2 layers. Measured current–voltage characteristics exhibit multiple resonant tunneling peaks, and their positions are continuously modulated in the broad range of θint from 0 to 60°. The results showed good agreement with calculated angular dispersion of the CB, including a crossing of spin-polarized subbands and a presence of saddle point. Our twist-controlled resonant tunneling overcome difficulties in measuring the momentum-resolved electronic structure and unveil the unique vdW-QW structure in the CB of 3L-WSe2.

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Keyword: Van der Waals quantum well, twisted-resonant tunneling, WSe2

Date published: 2023-12-26

Publisher: American Physical Society (APS)

Journal:

  • Physical Review Research (ISSN: 26431564) vol. 5 issue. 4 043292

Funding:

  • Japan Science and Technology Corporation JPMJCR15F3
  • Japan Science and Technology Corporation JPMJCR20B4
  • Japan Science and Technology Corporation JPMJMI21G9
  • Japan Science and Technology Corporation JPMJPR20L5
  • Japan Society for the Promotion of Science JP19H01820
  • Japan Society for the Promotion of Science JP19H02542
  • Japan Society for the Promotion of Science JP20H00127
  • Japan Society for the Promotion of Science JP20H00354
  • Japan Society for the Promotion of Science JP21H04652
  • Japan Society for the Promotion of Science JP21H05232
  • Japan Society for the Promotion of Science JP21H05233
  • Japan Society for the Promotion of Science JP21H05234
  • Japan Society for the Promotion of Science JP21H05236
  • Japan Society for the Promotion of Science JP21K18181
  • Japan Society for the Promotion of Science JP22H01898
  • Japan Society for the Promotion of Science JP22K18317
  • Japan Society for the Promotion of Science JP22J22105
  • Kenjiro Takayanagi Foundation
  • Japan Society for the Promotion of Science JP22KJ1104
  • Inoue Foundation for Science

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1103/physrevresearch.5.043292

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Updated at: 2025-02-28 08:31:22 +0900

Published on MDR: 2025-02-28 08:31:22 +0900

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