Kei Kinoshita
;
Rai Moriya
;
Shota Okazaki
;
Yijin Zhang
;
Satoru Masubuchi
;
Kenji Watanabe
(National Institute for Materials Science
)
;
Takashi Taniguchi
(National Institute for Materials Science
)
;
Takao Sasagawa
;
Tomoki Machida
説明:
(abstract)Few-layer-thick transition metal dichalcogenides have recently been found to exhibit discrete subbands, called van der Waals quantum well (vdW-QW) states, owing to the out-of-plane quantum confinement. The vdW-QW in the conduction band (CB) remained unelucidated due to the difficulty to access these states with conventional methods. Here we investigate the vdW-QW in the CB of 3- layer (3L) WSe2 using resonant tunneling in 3L WSe2/h-BN/3L WSe2 junction under the control of inter-layer twist angle θint between two WSe2 layers. Measured current–voltage characteristics exhibit multiple resonant tunneling peaks, and their positions are continuously modulated in the broad range of θint from 0 to 60°. The results showed good agreement with calculated angular dispersion of the CB, including a crossing of spin-polarized subbands and a presence of saddle point. Our twist-controlled resonant tunneling overcome difficulties in measuring the momentum-resolved electronic structure and unveil the unique vdW-QW structure in the CB of 3L-WSe2.
権利情報:
キーワード: Van der Waals quantum well, twisted-resonant tunneling, WSe2
刊行年月日: 2023-12-26
出版者: American Physical Society (APS)
掲載誌:
研究助成金:
原稿種別: 出版者版 (Version of record)
MDR DOI:
公開URL: https://doi.org/10.1103/physrevresearch.5.043292
関連資料:
その他の識別子:
連絡先:
更新時刻: 2025-02-28 08:31:22 +0900
MDRでの公開時刻: 2025-02-28 08:31:22 +0900
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PhysRevResearch.5.043292.pdf
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サイズ | 6.15MB | 詳細 |