Andrew Davies
;
Juan D. Albar
;
Alex Summerfield
;
James C. Thomas
;
Tin S. Cheng
;
Vladimir V. Korolkov
;
Emily Stapleton
;
James Wrigley
;
Nathan L. Goodey
;
Christopher J. Mellor
;
Andrei N. Khlobystov
;
Kenji Watanabe
(National Institute for Materials Science
)
;
Takashi Taniguchi
(National Institute for Materials Science
)
;
C. Thomas Foxon
;
Laurence Eaves
;
Sergei V. Novikov
;
Peter H. Beton
Description:
(abstract)Lattice-matched graphene is grown on hexagonal boron nitride using MBE and substrate temperatures in the range 1600-1710°C. The lattice-matched material co-exists with a topologically-modified moire pattern which terminates at defects in the graphene lattice, and regions of strained graphene with moiré periods up to ~ 80 nm. Raman spectra of regions with either lattice-matched graphene or giant moire patterns show, respectively, narrow shifted peaks due to uniform isotropic strain, and complex splitting of peaks due to strain variations across the moire unit cell. AFM shows that the conductance of Frenkel-Kontorova-type defects is higher than the lattice-matched graphene, and close to defects in the graphene lattice, is even higher.
Rights:
Keyword: Lattice-matched graphene, molecular beam epitaxy, moiré pattern
Date published: 2018-01-10
Publisher: American Chemical Society (ACS)
Journal:
Funding:
Manuscript type: Publisher's version (Version of record)
MDR DOI:
First published URL: https://doi.org/10.1021/acs.nanolett.7b04453
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Other identifier(s):
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Updated at: 2025-02-23 22:49:27 +0900
Published on MDR: 2025-02-23 22:49:27 +0900
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