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Lattice-matched graphene is grown on hexagonal boron nitride using MBE and substrate temperatures in the range 1600-1710°C. The lattice-matched material co-exists with a topologically-modified moire pattern which terminates at defects in the graphene lattice, and regions of strained graphene with moiré periods up to ~ 80 nm. Raman spectra of regions with either lattice-matched graphene or giant moire patterns show, respectively, narrow shifted peaks due to uniform isotropic strain, and complex splitting of peaks due to strain variations across the moire unit cell. AFM shows that the conductance of Frenkel-Kontorova-type defects is higher than the lattice-matched graphene, and close to defects in the graphene lattice, is even higher.

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• cc-by-3.0
  

Keyword: Lattice-matched graphene, molecular beam epitaxy, moiré pattern

Date published: 2018-01-10

Publisher: American Chemical Society (ACS)

Journal:

• Nano Letters (ISSN: 15306992) vol. 18 issue. 1 p. 498-504

Funding:

• Engineering and Physical Sciences Research Council EP/K005138/1
• Engineering and Physical Sciences Research Council EP/K040243/1
• Leverhulme Trust RPG-2014-129
• Leverhulme Trust RPG-2016-104
• Japan Society for the Promotion of Science JP15K21722
• Engineering and Physical Sciences Research Council EP/L013908/1
• Japan Society for the Promotion of Science JP25106006
• Japan Society for the Promotion of Science JP26248061

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1021/acs.nanolett.7b04453

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Updated at: 2025-02-23 22:49:27 +0900

Published on MDR: 2025-02-23 22:49:27 +0900