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Lattice-matched graphene is grown on hexagonal boron nitride using MBE and substrate temperatures in the range 1600-1710°C. The lattice-matched material co-exists with a topologically-modified moire pattern which terminates at defects in the graphene lattice, and regions of strained graphene with moiré periods up to ~ 80 nm. Raman spectra of regions with either lattice-matched graphene or giant moire patterns show, respectively, narrow shifted peaks due to uniform isotropic strain, and complex splitting of peaks due to strain variations across the moire unit cell. AFM shows that the conductance of Frenkel-Kontorova-type defects is higher than the lattice-matched graphene, and close to defects in the graphene lattice, is even higher.

権利情報:

• cc-by-3.0
  

キーワード: Lattice-matched graphene, molecular beam epitaxy, moiré pattern

刊行年月日: 2018-01-10

出版者: American Chemical Society (ACS)

掲載誌:

• Nano Letters (ISSN: 15306992) vol. 18 issue. 1 p. 498-504

研究助成金:

• Engineering and Physical Sciences Research Council EP/K005138/1
• Engineering and Physical Sciences Research Council EP/K040243/1
• Leverhulme Trust RPG-2014-129
• Leverhulme Trust RPG-2016-104
• Japan Society for the Promotion of Science JP15K21722
• Engineering and Physical Sciences Research Council EP/L013908/1
• Japan Society for the Promotion of Science JP25106006
• Japan Society for the Promotion of Science JP26248061

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1021/acs.nanolett.7b04453

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更新時刻: 2025-02-23 22:49:27 +0900

MDRでの公開時刻: 2025-02-23 22:49:27 +0900