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Description:

We investigate the energy relaxation of hot carriers in a CVD-grown graphene device with a top h-BN layer by driving the devices into the non-equilibrium regime. By using the magnetic field dependent conductance fluctuations of our graphene device as a self-thermometer, we can determine the effective carrier temperature Te at various driving current I while keeping the lattice temperature TL fixed. Interestingly, it is found that Te is proportional to I, indicative little electron-phonon scattering in our device. Furthermore the average rate of energy loss per carrier Pe is proportional to (Te2-TL2), suggestive the heat diffusion rather than acoustic phonon processes in our system.

Rights:

• Creative Commons BY Attribution 4.0 International
  

Keyword: Hot carriers, CVD graphene, energy relaxation

Date published: 2018-05-14

Publisher: Hindawi Limited

Journal:

• Journal of Nanomaterials (ISSN: 16874110) vol. 2018 issue. 1 p. 1-7 5174103

Funding:

• Academia Sinica MOST 106-2811-M-001-164
• Academia Sinica MOST 105-2119-M-002-048-MY3
• Academia Sinica JP16H00899

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1155/2018/5174103

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Updated at: 2025-02-23 22:49:24 +0900

Published on MDR: 2025-02-23 22:49:24 +0900