Hot Carriers in CVD-Grown Graphene Device with a Top h-BN Layer

C. Chuang; M. Mineharu; N. Matsumoto; M. Matsunaga; C.-W. Liu; B.-Y. Wu; Gil-Ho Kim; L.-H. Lin; Y. Ochiai; K. Watanabe; T. Taniguchi; C.-T. Liang; N. Aoki

doi:10.1155/2018/5174103

論文 Hot Carriers in CVD-Grown Graphene Device with a Top h-BN Layer

C. Chuang ; M. Mineharu ; N. Matsumoto ; M. Matsunaga ; C.-W. Liu ; B.-Y. Wu ; Gil-Ho Kim ; L.-H. Lin ; Y. Ochiai ; K. Watanabe (National Institute for Materials Science) ; T. Taniguchi (National Institute for Materials Science) ; C.-T. Liang ; N. Aoki

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C. Chuang, M. Mineharu, N. Matsumoto, M. Matsunaga, C.-W. Liu, B.-Y. Wu, Gil-Ho Kim, L.-H. Lin, Y. Ochiai, K. Watanabe, T. Taniguchi, C.-T. Liang, N. Aoki. Hot Carriers in CVD-Grown Graphene Device with a Top h-BN Layer. Journal of Nanomaterials. 2018, 2018 (1), 5174103. https://doi.org/10.1155/2018/5174103

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(abstract)

We investigate the energy relaxation of hot carriers in a CVD-grown graphene device with a top h-BN layer by driving the devices into the non-equilibrium regime. By using the magnetic field dependent conductance fluctuations of our graphene device as a self-thermometer, we can determine the effective carrier temperature Te at various driving current I while keeping the lattice temperature TL fixed. Interestingly, it is found that Te is proportional to I, indicative little electron-phonon scattering in our device. Furthermore the average rate of energy loss per carrier Pe is proportional to (Te2-TL2), suggestive the heat diffusion rather than acoustic phonon processes in our system.

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