C. Chuang
;
M. Mineharu
;
N. Matsumoto
;
M. Matsunaga
;
C.-W. Liu
;
B.-Y. Wu
;
Gil-Ho Kim
;
L.-H. Lin
;
Y. Ochiai
;
K. Watanabe
(National Institute for Materials Science
)
;
T. Taniguchi
(National Institute for Materials Science)
;
C.-T. Liang
;
N. Aoki
Collection
Citation
Description:
(abstract)We investigate the energy relaxation of hot carriers in a CVD-grown graphene device with a top h-BN layer by driving the devices into the non-equilibrium regime. By using the magnetic field dependent conductance fluctuations of our graphene device as a self-thermometer, we can determine the effective carrier temperature Te at various driving current I while keeping the lattice temperature TL fixed. Interestingly, it is found that Te is proportional to I, indicative little electron-phonon scattering in our device. Furthermore the average rate of energy loss per carrier Pe is proportional to (Te2-TL2), suggestive the heat diffusion rather than acoustic phonon processes in our system.
Rights:
Keyword: Hot carriers, CVD graphene, energy relaxation
Date published: 2018-05-14
Publisher: Hindawi Limited
Journal:
- Journal of Nanomaterials (ISSN: 16874110) vol. 2018 issue. 1 p. 1-7 5174103
Funding:
- Academia Sinica MOST 106-2811-M-001-164
- Academia Sinica MOST 105-2119-M-002-048-MY3
- Academia Sinica JP16H00899
Manuscript type: Publisher's version (Version of record)
MDR DOI:
First published URL: https://doi.org/10.1155/2018/5174103
Related item:
Other identifier(s):
Contact agent:
Updated at: 2025-02-23 22:49:24 +0900
Published on MDR: 2025-02-23 22:49:24 +0900
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