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We investigated track formation under an irradiation of less than 1 MeV: (i) With a decrease in energy, the diameters and lengths of the tracks decreased; however, the length decreased more steeply than the diameter. (ii) Although the tracks were fuzzily perceived down to 60-keV irradiation, no tracks were observed under 30-keV irradiation, except for an extended damage zone. Furthermore, we observed (iii) track formation below the electronic stopping threshold, and (iv) track length extension due to the “clearing-the-way” effect at low energies. (v) Finally, the approximated linearity between the track volume and C60 energy is discussed.

Rights:

• Creative Commons BY Attribution 4.0 International
  

  This is an open access article under the CC BY license
  ( http://creativecommons.org/licenses/by/4.0/ ).

Keyword: ion track, C60 ion, silicon, cluster effect, swift heavy ion

Date published: 2024-12-09

Publisher: Elsevier BV

Journal:

• Materialia (ISSN: 25891529) vol. 39 102317

Funding:

• JSPS 22K04990

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1016/j.mtla.2024.102317

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Updated at: 2025-01-21 12:30:27 +0900

Published on MDR: 2025-01-21 12:30:28 +0900