Download file (4.68MB)
Download as zip (4.43MB)

コレクション

引用

説明:

We investigated track formation under an irradiation of less than 1 MeV: (i) With a decrease in energy, the diameters and lengths of the tracks decreased; however, the length decreased more steeply than the diameter. (ii) Although the tracks were fuzzily perceived down to 60-keV irradiation, no tracks were observed under 30-keV irradiation, except for an extended damage zone. Furthermore, we observed (iii) track formation below the electronic stopping threshold, and (iv) track length extension due to the “clearing-the-way” effect at low energies. (v) Finally, the approximated linearity between the track volume and C60 energy is discussed.

権利情報:

• Creative Commons BY Attribution 4.0 International
  This is an open access article under the CC BY license ( http://creativecommons.org/licenses/by/4.0/ ).

キーワード: ion track, C60 ion, silicon, cluster effect, swift heavy ion

刊行年月日: 2024-12-09

出版者: Elsevier BV

掲載誌:

• Materialia (ISSN: 25891529) vol. 39 102317

研究助成金:

• JSPS 22K04990

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1016/j.mtla.2024.102317

関連資料:

その他の識別子:

連絡先:

更新時刻: 2025-01-21 12:30:27 +0900

MDRでの公開時刻: 2025-01-21 12:30:28 +0900