Continuous real-time O 1s core XPS spectra of initial O<sub>2</sub> molecule adsorption on polar and m-plane surfaces of GaN

SUMIYA, Masatomo

doi:10.1021/acs.jpcc.0c07151

Dataset Continuous real-time O 1s core XPS spectra of initial O₂ molecule adsorption on polar and m-plane surfaces of GaN

SUMIYA, Masatomo (National Institute for Materials Science)

Download all files (45.4 MB)

Collection

Citation

SUMIYA, Masatomo. Continuous real-time O 1s core XPS spectra of initial O₂ molecule adsorption on polar and m-plane surfaces of GaN. https://doi.org/10.1021/acs.jpcc.0c07151

(BibTeX)

Description:

(abstract)

The initial adsorption behavior of different GaN surfaces (the polar Ga-face (+c) and N-face (−c) and the nonpolar (101̅0) (m)-plane) under O₂ molecule beam irradiation was studied by continuous real-time monitoring of the O 1s core X-ray photoelectron spectra generated under synchrotron radiation. XPS measurements were performed at BL23SU, SPring-8. Analyzing the chemical shift allows for determining which site the oxygen atom bonds to depending on the polarity and plane of GaN, which contributes to detailed understanding of the surface oxidation process. The first column of each scan is the kinetic energy, and the second column is the count rate. Before starting XPS analysis, the sample was annealed at 900 °C for 20 minutes. A scan was obtained every 30 seconds while irradiating the surface with O₂ molecule beam. The data are in CSV and VAMAS formats.

Data origin type: other

Rights:

Creative Commons BY Attribution 4.0 International

Creative Commons BY Attribution 4.0 International

Keyword: GaN, Gallium nitride, Oxidation, Adsorption, XPS, SPring-8

Date published: 2020-11-19

Publisher: NIMS

Journal:

Funding:

Manuscript type: Not a journal article

MDR DOI: https://doi.org/10.48505/nims.3847

First published URL: https://doi.org/10.1021/acs.jpcc.0c07151

Related item:

is_supplement_to

Dynamic Observation and Theoretical Analysis of Initial O2 Molecule Adsorption on Polar and m-Plane Surfaces of GaN (dataset)
https://doi.org/10.1021/acs.jpcc.0c07151

Other identifier(s):

Contact agent:

Updated at: 2024-01-05 22:13:22 +0900

Published on MDR: 2023-02-14 09:41:28 +0900

Chemical composition / 試料の化学組成

Specimen ID / 試料ID :

Description / 化学組成の説明 : Gallium nitride

Category / カテゴリ :

Category description / カテゴリの説明 :

Chemical composition ID / 組成ID : 25617-97-4

Instrument / 装置

Name / 装置の名称 : BL23_XPS

Manufacturer / 装置製作者 :

Model number / 型番 :

Description / 装置の説明 :

Function / 機能 :

Function description / 機能の説明 :

Instrument ID / 装置ID :

Instrument operator / 装置操作者 :

Instrument managing organization / 装置管理組織 :

Measurement method / 計測法

Description / 説明 :

Category / カテゴリ : x-ray photoelectron spectroscopy

Category description / カテゴリの説明 :

Analysis field / 解析分野 :

Analysis field description / 解析分野の説明 :

Measurement environment / 計測環境 :

Standarized procedure / 標準手順 :

Measured at / 計測時刻 :

Filename	Size
Filename	GaFaceGaN_O2_O1s.zip application/zip	Size	16.2 MB	Detail
Filename	mGaN_O2_O1s.zip application/zip	Size	15 MB	Detail
Filename	NFaceGaN_O2_O1s.zip application/zip	Size	14.1 MB	Detail
Filename	GaN_O2.jpg (Thumbnail) image/jpeg	Size	450 KB	Detail