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We report the structural feature of sputter-deposited epitaxial [Co (0.2 nm)/Pt (0.2–1.0 nm)] multilayered films prepared with various periodic structural designs consisting of non-integer numbers of Co and Pt monoatomic layers on an atomically flat Ru(0001). Sharp superlattice modulation peaks and their systematic changes with the Pt thicknesses were observed in the x-ray diffraction (XRD) spectrum. The formation of periodic structures shows that layer-by-layer like growth occurs and the resulting incommensurate superlattice modulation survives down to an atomic scale even in the sputter-deposited Co/Pt multilayers. Magnetic properties were also investigated for the Co/Pt multilayers. Interestingly, the maximum perpendicular magnetic anisotropy Ku of 3 × 106 erg/cm3 was obtained for the [Co (0.2 nm)/Pt (0.3 nm)] multilayer exhibiting incommensurate superlattice modulation peaks, while the [Co (0.2 nm)/Pt (0.2 nm)] multilayer with a L11-like XRD peak showed a smaller Ku. A cross-sectional high-angle annular dark-field scanning transmission electron microscopy analysis revealed that a partially L11-ordered CoPt structure is formed in the [Co 0.2 nm/Pt 0.2 nm] multilayer, interpreting the observed Ku. This study gives a new insight into the structural feature of sputter-deposited Co/Pt multilayers useful for a wide range of spintronic devices, such as magnetic tunnel junctions.

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• Creative Commons BY Attribution 4.0 International
  

  © 2024 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).

Keyword: magnetic thin films, epitaxial growth, perpendicular magnetization

Date published: 2024-10-01

Publisher: AIP Publishing

Journal:

• APL Materials (ISSN: 2166532X) vol. 12 issue. 10

Funding:

• Core Research for Evolutional Science and Technology JPMJCR19J4
• Japan Society for the Promotion of Science 22H04966
• Japan Society for the Promotion of Science 24H00408
• Samsung Advanced Institute of Technology

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1063/5.0233911

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Updated at: 2024-11-23 16:30:20 +0900

Published on MDR: 2024-11-23 16:30:21 +0900