Journal article Confined growth of armchair MoS 2 nanotubes at the 1-nm limit
Yusuke Nakanishi (author) (Search by this author)
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Ryosuke Senga (author) (Search by this author)
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Shinpei Furusawa (author) (Search by this author)
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Yuta Sato (author) (Search by this author)
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Zheng Liu (author) (Search by this author)
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Takumi Tanaka (author) (Search by this author)
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Yanlin Gao (author) (Search by this author)
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Mina Maruyama (author) (Search by this author)
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Susumu Okada (author) (Search by this author)
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Yasumitsu Miyata (author) (Search by this author)
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Kazu Suenaga (author) (Search by this author)
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Citation
Yusuke Nakanishi, Ryosuke Senga, Shinpei Furusawa, Yuta Sato, Zheng Liu, Takumi Tanaka, Yanlin Gao, Mina Maruyama, Susumu Okada, Yasumitsu Miyata, Kazu Suenaga. Confined growth of armchair MoS 2 nanotubes at the 1-nm limit. Science. 2026, 392 (6802), 1061-1064. https://doi.org/10.1126/science.aee3446

Description:

(abstract)

Atomically thin nanotubes of semiconducting transition metal dichalcogenides offer a platform for exploring quantum phenomena at the one-dimensional limit and for realizing nanoscale transistor channels. However, conventional syntheses produce only large-diameter (>10 nm), multiwalled tubes with uncontrolled chiralities. We report the synthesis of single-walled molybdenum disulfide (MoS2) nanotubes with diameters approaching 1 nm, achieved through spatially confined reactions inside boron nitride (BN) nanotubes. The confined geometry stabilizes otherwise inaccessible, highly strained MoS2 nanotubes, yielding structurally well-defined armchair configurations. Their bandgaps shrink systematically with decreasing diameter, in accordance with long-standing theoretical predictions. The insulating BN sheath simultaneously provides an intrinsic gate-all-around architecture, thereby promising access to truly nanoscale transistor channels.

Rights:

  • In Copyright

    This is the author’s version of the work. It is posted here by permission of the AAAS for personal use, not for redistribution. The definitive version was published in Science on 4 Jun 2026; DOI: 10.1126/science.aee3446.

Keyword: MoS2, nanotube

Date published: 2026-06-04

Publisher: National Institute for Materials Science

Journal:

  • Science (ISSN: 00368075) vol. 392 issue. 6802 p. 1061-1064

Funding:

  • Japan Society for the Promotion of Science JP22H00283
  • Japan Society for the Promotion of Science JP23H01807
  • Japan Society for the Promotion of Science JP23H00277
  • Japan Society for the Promotion of Science JP24H00044
  • Japan Society for the Promotion of Science JP25K08442
  • Japan Society for the Promotion of Science JP25K22198
  • Japan Society for the Promotion of Science JP26H00393
  • Japan Society for the Promotion of Science JP26K01340
  • Japan Society for the Promotion of Science JP22H04957
  • Fusion Oriented REsearch for disruptive Science and Technology JPMJFR213X
  • Precursory Research for Embryonic Science and Technology JPMJPR23H5
  • The Noguchi Institute NJ202408
  • JKA Foundation 2025M-498
  • Core Research for Evolutional Science and Technology, Japan Science and Technology Agency JPMJCR20B1
  • Japan Society for the Promotion of Science JP21H05232
  • Japan Society for the Promotion of Science JP21H05234
  • Japan Society for the Promotion of Science JP21H05235

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.6344

First published URL: https://doi.org/10.1126/science.aee3446

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Updated at: 2026-06-18 11:39:36 +0900

Published on MDR: 2026-06-18 14:29:43 +0900

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