Description:
(abstract)Atomically thin nanotubes of semiconducting transition metal dichalcogenides offer a platform for exploring quantum phenomena at the one-dimensional limit and for realizing nanoscale transistor channels. However, conventional syntheses produce only large-diameter (>10 nm), multiwalled tubes with uncontrolled chiralities. We report the synthesis of single-walled molybdenum disulfide (MoS2) nanotubes with diameters approaching 1 nm, achieved through spatially confined reactions inside boron nitride (BN) nanotubes. The confined geometry stabilizes otherwise inaccessible, highly strained MoS2 nanotubes, yielding structurally well-defined armchair configurations. Their bandgaps shrink systematically with decreasing diameter, in accordance with long-standing theoretical predictions. The insulating BN sheath simultaneously provides an intrinsic gate-all-around architecture, thereby promising access to truly nanoscale transistor channels.
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This is the author’s version of the work. It is posted here by permission of the AAAS for personal use, not for redistribution. The definitive version was published in Science on 4 Jun 2026; DOI: 10.1126/science.aee3446.
Date published: 2026-06-04
Publisher: National Institute for Materials Science
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Manuscript type: Author's version (Accepted manuscript)
MDR DOI: https://doi.org/10.48505/nims.6344
First published URL: https://doi.org/10.1126/science.aee3446
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Updated at: 2026-06-18 11:39:36 +0900
Published on MDR: 2026-06-18 14:29:43 +0900
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