Journal article Roles of Carrier Doping, Band Gap, and Electron Relaxation Time in the Boltzmann Transport Calculations of a Semiconductor’s Thermoelectric Properties
Yukari Katsura (author) (Search by this author)
ORCID SAMURAI ;
Hidenori Takagi (author) (Search by this author)
;
Kaoru Kimura (author) (Search by this author)
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Citation
Yukari Katsura, Hidenori Takagi, Kaoru Kimura. Roles of Carrier Doping, Band Gap, and Electron Relaxation Time in the Boltzmann Transport Calculations of a Semiconductor’s Thermoelectric Properties. MATERIALS TRANSACTIONS. 2018, 59 (7), 1013-1021. https://doi.org/10.2320/matertrans.e-m2018813
SAMURAI

Description:

(abstract)

第一原理計算による熱電特性予測の需要が高まっているが、ボルツマン輸送計算には様々な誤差が含まれる。典型的な半導体(Si)について、バンドギャップ、電子緩和時間、フォノン熱伝導度を変化させて解析を行った。バイポーラー伝導はゼーベック係数の低下とローレンツ因子の増加によりzTを大きく低下させるため、高いzTには十分な大きさのバンドギャップが重要である。第一原理計算でよく見られるバンドギャップの過小評価は、狭ギャップ半導体の計算に大きな誤差をもたらす。また、高いzTには低いフォノン熱伝導度と電子緩和時間の比が必要で、電子緩和時間は温度や試料により10^-15から10^-14秒の範囲で変化することが分かった。

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Keyword: thermoelectric properties, Boltzmann transport calculation, first-principles calculation

Date published: 2018-07-01

Publisher: The Japan Institute of Metals and Materials

Journal:

  • MATERIALS TRANSACTIONS (ISSN: 13475320) vol. 59 issue. 7 p. 1013-1021

Funding:

  • Ministry of Education, Culture, Sports, Science and Technology (MEXT) 16K14379 (A large-scale high dimensional material property database by a literature data collection system)
  • Ministry of Education, Culture, Sports, Science and Technology (MEXT) 23760647 (A large-scale high dimensional material property database by a literature data collection system)
  • Japan Science and Technology Agency (JST) (Support Program for Starting Up Innovation Hub MI2I (Materials research by Information Integration Initiative))

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.2320/matertrans.e-m2018813

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Updated at: 2024-11-22 16:30:51 +0900

Published on MDR: 2024-11-22 16:30:51 +0900

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