Article Quantum transport phenomena at oxide interfaces: Their potential for quantum science and technology

Yusuke Kozuka SAMURAI ORCID

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Yusuke Kozuka. Quantum transport phenomena at oxide interfaces: Their potential for quantum science and technology. New Physics: Sae Mulli. 2025, 75 (12), 944-955. https://doi.org/10.3938/npsm.75.944

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(abstract)

High-mobility charge carriers at semiconductor interfaces have provided fertile ground for the study of low-dimensional physics, such as the integer and fractional quantum Hall effects. In these studies, unique properties belonging to each material have not been explicitly highlighted, as the fundamental phenomena are believed to be universal and independent of the details of the materials. Here, we review high-mobility electrons at oxide interfaces, from fabrication to characterization. By incorporating the unique aspects of oxide materials as compared to conventional semiconductors, we can explore more diverse physics, including characteristic phenomena such as superconductivity and strong correlation. Finally, we discuss the prospects for potential quantum science and applications based on oxide interfaces.

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Keyword: Oxides, Crystal growth, Quantum Hall effect, Superconductivity, Mesoscopic systems

Date published: 2025-12-31

Publisher: Korean Physical Society

Journal:

  • New Physics: Sae Mulli (ISSN: 03744914) vol. 75 issue. 12 p. 944-955

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Manuscript type: Publisher's version (Version of record)

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First published URL: https://doi.org/10.3938/npsm.75.944

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Updated at: 2026-01-08 08:23:46 +0900

Published on MDR: 2026-01-08 12:22:18 +0900

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