Quantum transport phenomena at oxide interfaces: Their potential for quantum science and technology

Yusuke Kozuka

doi:10.3938/npsm.75.944

論文 Quantum transport phenomena at oxide interfaces: Their potential for quantum science and technology

Yusuke Kozuka

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Yusuke Kozuka. Quantum transport phenomena at oxide interfaces: Their potential for quantum science and technology. New Physics: Sae Mulli. 2025, 75 (12), 944-955. https://doi.org/10.3938/npsm.75.944

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High-mobility charge carriers at semiconductor interfaces have provided fertile ground for the study of low-dimensional physics, such as the integer and fractional quantum Hall effects. In these studies, unique properties belonging to each material have not been explicitly highlighted, as the fundamental phenomena are believed to be universal and independent of the details of the materials. Here, we review high-mobility electrons at oxide interfaces, from fabrication to characterization. By incorporating the unique aspects of oxide materials as compared to conventional semiconductors, we can explore more diverse physics, including characteristic phenomena such as superconductivity and strong correlation. Finally, we discuss the prospects for potential quantum science and applications based on oxide interfaces.

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