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説明:

We report on the photodetection properties of high-quality graphene encapsulated by hexagonal boron nitride under illumination with optical communication light. We demonstrate a gate-tunable photocurrent and zero-bias switching cycle operation at room temperature. Through gate- and temperature-dependent photocurrent measurements, we determine that the dominant photoresponse mechanism is the photo-thermoelectric effect.
At low temperatures, the photocurrent in finite doping regions correlates with the Seebeck coefficient, while
sharp peaks emerge near the charge neutrality point due to an edge-excited photocurrent. Our study provides guidelines for high-performance graphene-based optoelectronic devices.

権利情報:

• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  

キーワード: graphene/hBN heterostructure, photodetector, photo-thermoelectric effect

刊行年月日: 2024-03-01

出版者: IOP Publishing

掲載誌:

• Japanese Journal of Applied Physics (ISSN: 13474065) vol. 63 issue. 3 030903

研究助成金:

• National Institute for Materials Science JPMXP1223NM5186
• Japan Society for the Promotion of Science JP21H01400, JP21H01749, JP22H01555, JP22H01893, JP23H00274, JP23H05469

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5232

公開URL: https://doi.org/10.35848/1347-4065/ad2bd6

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更新時刻: 2025-03-06 12:30:21 +0900

MDRでの公開時刻: 2025-03-06 12:30:21 +0900