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In contrast to conventional semiconductor materials, this review outlines a new strategy for metals to be high-performance thermoelectric materials. We have proposed “intrinsic energy filtering” as a strategy to overcome the inherently low Seebeck coefficients in metals. This strategy involves engineering electronic structures where a dispersive conduction band and a localized flat band coexist near the Fermi level, creating strong energy dependence in the carrier relaxation time, thereby generating a large Seebeck coefficient S.
Effectiveness has manifested in distinct material systems; Ni–Au alloy, where disorder-mediated s–d interband scattering achieves exceptionally high power factors ~34 mWm-1K-2. Ni3Ge exhibits a relatively large S~-80 μVK-1 through interband scattering. Strategy was extended to the Kagome metal Ni3In, with topological flat band, revealing that Zener tunneling can suppress S, and thereby impetus to circumvent this.
These developments point to a new horizon for development of next-generation thermoelectric materials, unlocked by precise control of scattering mechanisms.

Rights:

• Creative Commons BY Attribution 4.0 International
  

Keyword: thermoelectric materials

Date published: 2026-07-01

Publisher: IOP Publishing

Journal:

• Applied Physics Express (ISSN: 18820786) vol. 19 issue. 7 070104

Funding:

• JST-Mirai Program JPMJMI19A1

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.35848/1882-0786/ae84a0

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Updated at: 2026-08-03 09:54:18 +0900

Published on MDR: 2026-08-03 12:31:04 +0900