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In contrast to conventional semiconductor materials, this review outlines a new strategy for metals to be high-performance thermoelectric materials. We have proposed “intrinsic energy filtering” as a strategy to overcome the inherently low Seebeck coefficients in metals. This strategy involves engineering electronic structures where a dispersive conduction band and a localized flat band coexist near the Fermi level, creating strong energy dependence in the carrier relaxation time, thereby generating a large Seebeck coefficient S.
Effectiveness has manifested in distinct material systems; Ni–Au alloy, where disorder-mediated s–d interband scattering achieves exceptionally high power factors ~34 mWm-1K-2. Ni3Ge exhibits a relatively large S~-80 μVK-1 through interband scattering. Strategy was extended to the Kagome metal Ni3In, with topological flat band, revealing that Zener tunneling can suppress S, and thereby impetus to circumvent this.
These developments point to a new horizon for development of next-generation thermoelectric materials, unlocked by precise control of scattering mechanisms.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: thermoelectric materials

刊行年月日: 2026-07-01

出版者: IOP Publishing

掲載誌:

• Applied Physics Express (ISSN: 18820786) vol. 19 issue. 7 070104

研究助成金:

• JST-Mirai Program JPMJMI19A1

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.35848/1882-0786/ae84a0

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更新時刻: 2026-08-03 09:54:18 +0900

MDRでの公開時刻: 2026-08-03 12:31:04 +0900